BLF6G22LS-75
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
17
G
p
(dB)
18.7
D
(%)
30.5
IMD3
(dBc)
37.5
[1]
ACPR
(dBc)
41.5
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I
Dq
of 690 mA:
Average output power = 17 W
Gain = 18.7 dB
Efficiency = 30.5 %
IMD3 =
37.5
dBc
ACPR =
41.5
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-75
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G22LS-75
-
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
18
+150
225
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 17 W
Typ
Unit
0.75 K/W
BLF6G22LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 11
BLF6G22LS-75
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 100 mA
V
DS
= 28 V; I
D
= 690 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.5 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.75
-
14.9
-
-
-
-
Typ
-
2
2.16
-
18.7
-
7.3
0.14
1.5
Max
-
2.4
2.75
3
-
300
-
0.24
-
Unit
V
V
V
A
A
nA
S
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 690 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
G
p
IRL
D
IMD3
ACPR
power gain
input return loss
drain efficiency
third order intermodulation distortion
adjacent channel power ratio
Conditions
P
L(AV)
= 17 W
P
L(AV)
= 17 W
P
L(AV)
= 17 W
P
L(AV)
= 17 W
P
L(AV)
= 17 W
Min
17.6
-
28
-
-
Typ
18.7
9.5
30.5
Max
-
6.5
-
Unit
dB
dB
%
dBc
dBc
37.5 34
41.5 38.5
7.1 Ruggedness in class-AB operation
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 690 mA; P
L
= 75 W (CW); f = 2170 MHz.
BLF6G22LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 11
BLF6G22LS-75
Power LDMOS transistor
20
G
p
(dB)
19
G
p
001aah586
70
η
D
(%)
55
18
η
D
17
40
25
16
0
20
40
60
80
10
100
P
L
(W)
V
DS
= 28 V; I
Dq
= 690 mA; f = 2140 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power; typical
values
20
G
p
(dB)
19
G
p
001aah567
60
η
D
(%)
45
−15
IMD
(dBc)
−30
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IMD3
IMD5
η
D
18
30
IMD7
−45
17
15
−60
16
0
20
40
60
80
100
0
120
140
P
L(PEP)
(W)
−75
0
20
40
60
80
100
120
140
P
L(PEP)
(W)
V
DS
= 28 V; I
Dq
= 690 mA; f
1
= 2140 MHz; f
2
= 2140.1
MHz.
V
DS
= 28 V; I
Dq
= 690 mA; f
1
= 2140 MHz; f
2
= 2140.1
MHz.
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 11
BLF6G22LS-75
Power LDMOS transistor
20
G
p
(dB)
19
001aah569
60
η
D
(%)
40
−25
IMD3
IMD3,
ACPR
(dBc)
−35
ACPR
001aah570
G
p
η
D
18
20
−45
17
0
10
20
30
40
P
L(AV)
(W)
0
−55
0
10
20
30
40
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 690 mA; f
1
= 2135 MHz;
f
2
= 2145 MHz; carrier spacing 10 MHz.
V
DS
= 28 V; I
Dq
= 690 mA; f
1
= 2135 MHz;
f
2
= 2145 MHz; carrier spacing 10 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of average load power; typical
values
8. Test information
V
GG
C22
R1
C5
C6
C7
R2
C8
C9
C4
C14
C23
V
DD
C10 C11 C12 C13
C1
C2
C3
C21
INPUT
C20
OUTPUT
C15 C16 C17 C18 C19
001aah571
The drawing is not to scale.
Fig 6.
Test circuit for operation at 800 MHz
BLF6G22LS-75#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 11
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