BA782S-G, BA783S-G
www.vishay.com
Vishay Semiconductors
Band Switching Diodes
FEATURES
•
Silicon epitaxial planar diode switches
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-323
Weight:
approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
DESCRIPTION
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
PARTS TABLE
PART
BA782S-G
BA783S-G
ORDERING CODE
BA782S-G3-08 or BA782S-G3-18
BA782S-HG3-08 or BA782S-HG3-18
BA783S-G3-08 or BA783S-G3-18
BA783S-HG3-08 or BA783S-HG3-18
TYPE MARKING
R4
R5
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward continuous current
TEST CONDITIONS
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
T
op
VALUE
125
- 55 to + 150
- 55 to + 125
UNIT
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 3 V
f = (50 to 1000) MHz, I
F
= 3 mA
Dynamic forward resistance
f = (50 to 1000) MHz, I
F
= 10 mA
Series inductance across case
BA782S-G
BA783S-G
BA782S-G
BA783S-G
BA782S-G
BA783S-G
PART
SYMBOL
V
F
I
R
C
D1
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
L
S
2.5
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
nH
Rev. 1.1, 14-May-14
Document Number: 85239
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BA782S-G, BA783S-G
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
r
f
- Dynamic Forward Resistance (Ω)
10
T
amb
= 25 °C
BA782S-G, BA783S-G
1 kHz
Vishay Semiconductors
2.0
C
D
- Diode Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
T
j
= 25 °C
f = 1 MHz
1
BA783S-G
100 MHz
BA782S-G
100 MHz
0.1
1
10
100
10
100
18798
V
R
- Reverse Voltage (V)
Fig. 1 - Diode Capacitance
I
F
- Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-323
1.15 (0.045)
0.8 (0.031)
0.2 (0.008)
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
1.5 (0.059)
1.1 (0.043)
0° to 8
°
0.1 (0.004) max.
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
1.6 (0.063)
17443
Rev. 1.1, 14-May-14
Document Number: 85239
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
Legal Disclaimer Notice
www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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