BLA8G1011L(S)-300;
BLA8G1011L(S)-300G
Power LDMOS transistor
Rev. 4 — 4 August 2016
Product data sheet
1. Product profile
1.1 General description
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to
1090 MHz.
Table 1.
Test information
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Test signal
pulsed RF
f
(MHz)
1060
V
DS
(V)
32
P
L
(W)
300
G
p
(dB)
16.5
D
(%)
56
t
r
(ns)
14
t
f
(ns)
5
1.2 Features and benefits
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range
BLA8G1011L(S)-300(G)
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLA8G1011L-300 (SOT502A)
1
3
2
1
2
3
sym112
BLA8G1011LS-300 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
BLA8G1011L-300G (SOT502F)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
BLA8G1011LS-300G (SOT502E)
1
2
3
drain
gate
source
[1]
1
1
2
3
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLA8G1011L-300
BLA8G1011LS-300
BLA8G1011L-300G
BLA8G1011LS-300G
-
-
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
eared flanged ceramic package; 2 leads; 2 mounting
holes
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
SOT502F
SOT502E
Type number
BLA8G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2016
2 of 14
BLA8G1011L(S)-300(G)
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Z
th(j-c)
Thermal characteristics
Conditions
Typ
Unit
transient thermal impedance from junction to T
case
= 25
C;
t
p
= 10
s;
case
= 10 %
0.112 K/W
Symbol Parameter
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
DS
= 10 V; I
D
= 450 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 450 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 15.75 A
Min
65
1.5
-
67.9
-
2.67
Typ
-
1.8
-
82
-
3.92
Max
-
2.3
4.2
-
420
5.25
Unit
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 4.5 mA
0.008 0.04
0.079
Table 7.
RF characteristics
Test signal: pulsed RF; t
p
= 50
s;
= 2 %; V
DS
= 32 V; f = 1060 MHz; I
Dq
= 150 mA; T
case
= 25
C;
unless otherwise specified; in a class-AB production test circuit for straight leads.
Symbol
G
p
RL
in
D
t
r
t
f
Parameter
power gain
input return loss
drain efficiency
rise time
fall time
Conditions
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
P
L
= 300 W
Min
15
-
52
-
-
Typ
16.5
16
56
14
5
Max
-
11
-
-
-
Unit
dB
dB
%
ns
ns
BLA8G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2016
3 of 14
BLA8G1011L(S)-300(G)
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLA8G1011L-300, BLA8G1011LS-300, BLA8G1011L-300G and
BLA8G1011LS-300G are enhanced rugged devices and are capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: t
p
= 50
s;
= 2 %; V
DS
= 32 V; I
Dq
= 100 mA; P
L
= 300 W; f = 1030 MHz to
1090 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
(MHz)
1000
1050
1100
Z
S
()
2.84
j3.69
3.98
j3.26
5.22
j2.92
Z
L
()
0.80
j1.00
0.62
j1.26
0.66
j1.17
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLA8G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2016
4 of 14
BLA8G1011L(S)-300(G)
Power LDMOS transistor
7.3 Test circuit
70 mm
70 mm
R3
C17
R1
C21
C14
C9
C1
C3
C11
C15 C22
C5 C19
60 mm
C7
C8
C10
C12
C6
C4
C20
C13
R2
C18
aaa-015867
C2
Printed-Circuit Board (PCB): Rogers 4350B;
r
= 3.66; thickness = 0.765 mm; thickness copper
plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout
Table 9.
List of components
See
Figure 2
for component layout.
Component
C1, C4
C2, C3, C5
C6
C7
C8
C9, C10
C11, C12
C13, C14, C15
C17, C18, C19
C20, C21
C22
R1, R2
R3
Description
Value
Remarks
ATC: ATC100A910FT150XT
ATC: ATC100B390FT500XTV
ATC: ATC800B1R5BT500XTV
ATC: ATC100B3R3BT500XTV
ATC: ATC100B2R4BT500XTV
ATC: ATC100B0R6BT500XTV
ATC: ATC100B2R7BT500XTV
Murata: GRM31C5C1H104JA01K
Murata: GRM31MR71H105KA88L
TDK: C5750X7R2A475K230KA
Murata: GRM32ER71H475KA88L
Yageo: RC0805FR-079R1L
Ohmite: LVK25R010FER
multilayer ceramic chip capacitor 91 pF
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 3.3 pF
multilayer ceramic chip capacitor 2.4 pF
multilayer ceramic chip capacitor 0.6 pF
multilayer ceramic chip capacitor 2.7 pF
multilayer ceramic chip capacitor 0.1
F
multilayer ceramic chip capacitor 1
F
multilayer ceramic chip capacitor 4.7
F
multilayer ceramic chip capacitor 4.7
F
SMD resistor
SMD resistor
9.1
0.01
BLA8G1011L-300_LS-300_L-300G_LS-300G
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 4 August 2016
5 of 14
京公网安备 11010802033920号
EEWORLD
