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CD214C-B330

Description
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
CategoryDiscrete semiconductor    diode   
File Size368KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric Compare View All

CD214C-B330 Overview

CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode

CD214C-B330 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

CD214C-B330 Preview

PL
IA
N
T
Features
n
RoHS compliant*
n
SMC package
n
Surface mount
n
High current capability
*R
oH
S
This series is currently available but
not recommended for new designs.
The
Model CD214C-B3xR Series
is the recommended replacement.
C
OM
LE
AD
F
RE
E
CD214C-B320 ~ B360
Schottky Barrier Rectifier Chip Diode
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AB (SMC) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214C-
B320
B330
B340
B350
B360
Unit
Forward Voltage (Max.)
(If = 3 A)
Typical Junction
Capacitance*
VF
CT
IR
0.5
0.5
0.5
250
0.5
0.7
0.7
V
pF
mA
Reverse Current (Max.)
at Rated VR)
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD214C-
B320
B330
B340
B350
B360
Unit
Repetitive Peak
Reverse Voltage
Reverse Voltage
Maximum RMS Voltage
Avg. Forward Current
Forward Current,
Surge Peak
(60 Hz, 1 cycle)
Typical Thermal
Resistance**
Storage Temperature
Junction Temperature
VRRM
VRMS
IO
Isurge
R
ΘJL
TSTG
TJ
VR
20
20
14
30
30
21
40
40
28
3
100
10
-55 to +150
-55 to +125
50
50
35
60
60
42
V
V
V
A
A
°C/W
°C
°C
** Thermal resistance junction to lead.
How to Order
CD 214C - B 3 30 LF
Common Code
CD = Chip Diode
Package
214C = SMC/DO-214AB
Model
B = Schottky Barrier Series
Average Forward Current (IO) Code
3 = 3 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
40 = 40 V
60 = 60 V
30 = 30 V
50 = 50 V
Terminations
LF = 100 % Sn (RoHS Compliant)
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast
2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-B320 ~ B360
Schottky Barrier Rectifier Chip Diode
Product Dimensions
A
A
Recommended Pad Layout
A
A
B
B
C
C
B
B
C
C
G
G
Dimension
A
H
H
F
E
F
E
D
D
SMC (DO-214AB)
7.90
(0.311)
4.00
(0.157)
2.30
(0.091)
B
C
Dimension
A
B
C
D
E
F
G
H
MM
MM
DIMENSIONS:
DIMENSIONS:
(INCHES)
6.60 - 7.11
(INCHES)
SMC (DO-214AB)
(0.260 - 0.280)
5.59 - 6.22
(0.220 - 0.245)
2.92 - 3.18
(0.115 - 0.125)
0.15 - 0.31
().006 - 0.112)
7.75 - 8.13
(0.305 - 0.320)
0.05 - 0.20
(0.002 - 0.008)
2.01 - 2.62
(0.080 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
MM
DIMENSIONS:
(INCHES)
Physical Specifications
Case ........................................................................... Molded plastic
Polarity.....................................................Indicated by cathode band
Weight .................................................... 0.007 ounces / 0.21 grams
Typical Part Marking
MANUFACTURER'S
TRADEMARK
DATE CODE:
YEAR = Y
Week = WW
YWW
B3XX
DEVICE CODE
MM
DIMENSIONS:
(INCHES)
EXAMPLE:
304
DATE CODE = 4TH WEEK OF 2013
B340
DEVICE CODE = CD214C-B340
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-B320 ~ B360
Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
5.0
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
4.0
3.0
2.0
1.0
0.0
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
25
50
75
100
125
150
175
Maximum Non-Repetitive Surge Current
120
100
80
60
40
20
0
1
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
2
5
10
20
50
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Typical Forward Characteristics
10
Typical Junction Capacitance
1000
Instantaneous Forward Current (Amps)
B320 to B340
Ta = 25 °C
Pulsewidth: 300 µs
1.0
B350 to B360
Capacitance (pF)
100
0.1
.01
0
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
F = 1 MHz
Ta = 25 °C
0.1
1.0
4.0
10.0
100
Reverse Voltage (Volts)
Typical Reverse Characteristics
100
10
Instantaneous Reverse Current (mA)
Ta = 125 °C
Ta = 100 °C
1.0
0.1
0.01
Ta = 25 °C
0.001
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-B320 ~ B360
Schottky Barrier Rectifier Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
E
T
120 ϒ
F
B
W
D2
D1 D
d
Index Hole
P
Trailer
A
Device
C
Leader
W1
End
....... .......
....... .......
.......
....... ....... .......
10 pitches (min.)
10 pitches (min.)
Start
MM
DIMENSIONS:
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
SMC (DO-214AB)
7.22 ± 0.10
(0.284 - 0.004)
8.11 ± 0.10
(0.319 - 0.004)
2.36 ± 0.10
(0.093 - 0.004)
1.55 ± 0.05
(0.061 - 0.002)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 - 0.008)
1.75 ± 0.10
(0.069 - 0.004))
7.50 ± 0.10
(0.295 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
2.00 ± 0.10
(0.079 - 0.004)
0.30 ± 0.10
(0.012 - 0.004)
16.00 ± 0.20
(0.630 - 0.008)
22.4
MAX.
(0.882)
3,000
REV. 01/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.

CD214C-B330 Related Products

CD214C-B330 CD214C-B320 CD214C-B340 CD214C-B350 CD214C-B360
Description CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Parts packaging code DO-214AB DO-214AB DO-214AB DO-214AB DO-214AB
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Contacts 2 2 2 2 2
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE -
Configuration SINGLE SINGLE - SINGLE -
Diode component materials SILICON SILICON - SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE -
JEDEC-95 code DO-214AB DO-214AB - DO-214AB -
JESD-30 code R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 -
JESD-609 code e0 e0 - e0 -
Humidity sensitivity level 1 1 - 1 -
Maximum non-repetitive peak forward current 100 A 100 A - 100 A -
Number of components 1 1 - 1 -
Phase 1 1 - 1 -
Number of terminals 2 2 - 2 -
Maximum output current 3 A 3 A - 3 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Certification status Not Qualified Not Qualified - Not Qualified -
Maximum repetitive peak reverse voltage 30 V 20 V - 50 V -
surface mount YES YES - YES -
technology SCHOTTKY SCHOTTKY - SCHOTTKY -
Terminal surface TIN LEAD TIN LEAD - TIN LEAD -
Terminal form C BEND C BEND - C BEND -
Terminal location DUAL DUAL - DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Base Number Matches 1 - 1 1 1
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