Important notice
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DISCRETE SEMICONDUCTORS
DATA SHEET
BC859; BC860
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 May 28
2004 Jan 16
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
MARKING
TYPE
NUMBER
BC859B
BC859C
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BC859B
BC859C
BC860B
BC860C
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING
CODE
(1)
4B*
4C*
TYPE
NUMBER
BC860B
BC860C
MARKING
CODE
(1)
4F*
4G*
Top view
handbook, halfpage
BC859; BC860
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC859
BC860
V
CEO
collector-emitter voltage
BC859
BC860
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
MIN.
BC859; BC860
MAX.
−30
−50
−30
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
Notes
1. V
BEsat
decreases by about
−1.7
mV/K with increasing temperature.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA; note 1
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V; note 2
I
C
=
−10
mA; V
CE
=
−5
V; note 2
I
E
= I
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= I
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 30 Hz to 15 kHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2 and 3
BC859; BC860
MIN.
−
−
−
220
420
−
−
−
−
−600
−
−
−
TYP.
−1
−
−
−
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
MAX.
−15
−4
−100
475
800
−300
−650
−
−
−750
−820
−
−
−
4
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
−
−
−
4
dB
2004 Jan 16
4
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