BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
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•
Complementary Types are BD438 and BD442
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
32
45
60
80
V
CBO
32
45
60
80
V
EBO
I
C
I
B
P
D
36
288
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
5.0
4.0
1.0
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
BD4xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.5
Unit
°C/W
Y
WW
BD4xx
G
= Year
= Work Week
= Device Code
xx = 35, 37, 37T, 39, 41
= Pb−Free Package
ORDERING INFORMATION
Device
BD435G
BD437G
BD437TG
BD439G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BD441G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
50 Units/Rail
500 Units/Box
500 Units/Box
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 17
Publication Order Number:
BD437/D
BD435G, BD437G, BD439G, BD441G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 100 mA, I
B
= 0)
BD435G
BD437G
BD439G
BD441G
Collector−Base Breakdown Voltage
(I
C
= 100
mA,
I
B
= 0)
BD435G
BD437G
BD439G
BD441G
Emitter−Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 32 V, I
E
= 0)
BD435G
(V
CB
= 45 V, I
E
= 0)
BD437G
(V
CB
= 60 V, I
E
= 0)
BD439G
(V
CB
= 80 V, I
E
= 0)
BD441G
Emitter Cutoff Current
(V
EB
= 5.0 V)
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
BD435G
BD437G
BD439G
BD441G
DC Current Gain
(I
C
= 500 mA, V
CE
= 1.0 V)
BD435G
BD437G
BD439G, BD441G
DC Current Gain
(I
C
= 2.0 A, V
CE
= 1.0 V)
BD435G
BD437G
BD439G
BD441G
Collector Saturation Voltage
(I
C
= 2.0 A, I
B
= 0.2 V)
BD435G
(I
C
= 3.0 A, I
B
= 0.3 A)
BD437G, BD439G, BD441G
Base−Emitter On Voltage
(I
C
= 2.0 A, V
CE
= 1.0 V)
Current−Gain − Bandwidth Product
(V
CE
= 1.0 V, I
C
= 250 mA, f = 1.0 MHz)
Symbol
V
(BR)CEO
32
45
60
80
V
(BR)CBO
32
45
60
80
V
(BR)EBO
5.0
I
CBO
−
−
−
−
I
EBO
−
h
FE
40
30
20
15
h
FE
85
85
40
h
FE
50
40
25
15
V
CE(sat)
−
−
V
BE(on)
−
f
T
3.0
−
−
−
1.1
MHz
−
−
0.5
0.8
Vdc
−
−
−
−
−
−
−
−
Vdc
−
−
−
475
375
475
−
−
−
−
−
−
−
−
−
−
−
1.0
−
−
−
−
−
0.1
0.1
0.1
0.1
mAdc
−
−
mAdc
−
−
−
−
−
−
−
−
Vdc
−
−
−
−
−
−
−
−
Vdc
Min
Typ
Max
Unit
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BD435G, BD437G, BD439G, BD441G
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
1.6
I
C
= 10 A
100 mA
1.0 A
3.0 A
1.2
0.8
T
J
= 25°C
0.4
0
0.05 0.070.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
50 70 100
200 300
500
Figure 1. Collector Saturation Region
hFE CURRENT GAIN (NORMALIZED)
,
200
180
160
140
120
100
80
60
40
20
0
0.01
0.02
0.03
0.05
0.2
0.3
0.5
0.1
I
C
, COLLECTOR CURRENT (AMP)
1
2
3
5
BD433, 435, 437
BD439, 441
Figure 2. Current Gain
T
J
= 25°C
1.6
VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
2.0
10
4.0
T
J
= 150°C
1.0
0.5
dc
5 ms
1.2
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
SECONDARY BREAKDOWN
THERMAL LIMIT T
C
= 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED V
CEO
BD437
BD439
BD441
0.6
V
CE(sat)
@ I
C
/I
B
= 10
0
0.005 0.01 0.02 0.030.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
I
C
, COLLECTOR CURRENT (AMP)
0.1
1.0
5.0
50
2.0
10
20
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. “On” Voltage
Figure 4. Active Region Safe Operating Area
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3
BD435G, BD437G, BD439G, BD441G
PACKAGE DIMENSIONS
4
TO−225
CASE 77−09
ISSUE AC
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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4
BD437/D
Analog electronics
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