BAR64V-05W
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Dual, Common Cathode in SOT-323
FEATURES
• High voltage current controlled RF resistor
• Small diode capacitance
3
• Low series inductance
• Low forward resistance
• Improved performance due to two separate dice
• Base P/N-E3 - RoHS-compliant, commercial grade
1
2
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• For frequencies up to 3 GHz
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
• RF-signal tuning
• Signal attenuator and switches
• Mobile, wireless, and TV-applications
DESCRIPTION
Characterized by low reverse capacitance the PIN diodes
BAR64V-05W was designed for RF signal switching and
tuning. As a function of the forward bias current the forward
resistance (RF) can be adjusted over a wide range. A long
carrier life time offers low signal distortion for signals over
10 MHz up to 3 GHz. Typical applications for these PIN
diodes are switches and attenuators in wireless, mobile, and
TV-systems.
MECHANICAL DATA
Case:
SOT-323
Weight:
approx. 5.7 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAR64V-05W
ORDERING CODE
BAR64V-05W-E3-08 or BAR64V-05W-E3-18
TYPE MARKING
DW5
CIRCUIT CONFIGURATION
Common cathode
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
Reverse voltage
Forward continuous current
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
100
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
SYMBOL
T
j
T
stg
T
op
VALUE
150
-55 to +150
-55 to +125
UNIT
°C
°C
°C
Rev. 1.6, 27-Apr-17
Document Number: 81836
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAR64V-05W
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 50 mA
I
F
= 10 μA
V
R
= 50 V
f = 1 MHz, V
R
= 0 V
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 20 V
PART
SYMBOL
V
F
V
R
I
R
C
D
C
D
C
D
r
f
r
f
r
f
t
rr
L
S
0.5
0.37
0.23
10
2
0.8
1.8
1
0.5
0.35
20
3.8
1.35
100
0.05
MIN.
TYP.
MAX.
1.1
UNIT
V
V
μA
pF
pF
pF
μs
nH
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse voltage
Reverse current
Diode capacitance
f = 100 MHz, I
F
= 1 mA
Differential forward resistance
Charge carrier lifetime
Series inductance
f = 100 MHz, I
F
= 10 mA
f = 100 MHz, I
F
= 100 mA
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
100.00
100.0
r
f
- Forward Resistance (Ω)
f = 100 MHz
10.0
I
F
- Forward Current (mA)
100
10.00
1.00
1.0
0.10
0.1
0.1
18342
1
10
0.01
0.5
18326
0.6
0.7
0.8
0.9
1.0
I
F
- Forward Current (mA)
V
F
- Forward
Voltage
(V)
Fig. 1 -
Forward Resistance vs. Forward Current
Fig. 3 -
Forward Current vs. Forward Voltage
0.50
0.45
f = 1 MHz
12
10
I
F
= 10 mA
I
R
= 6 mA
i
R
=
3 mA
C
D
- Diode Capacitance (pF)
I
F
- Forward Current (mA)
0
4
8
12
16
20
24
28
18338
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
-2
-4
-6
-8
- 500
500
1500
2500
3500
18334
V
R
- Reverse
Voltage
(V)
t
rr
- Reverse Recovery Time (ns)
Fig. 2 -
Diode Capacitance vs. Reverse Voltage
Fig. 4 -
Typical Charge Recovery Curve
Rev. 1.6, 27-Apr-17
Document Number: 81836
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAR64V-05W
www.vishay.com
Vishay Semiconductors
0
- 0.5
-1
- 1.5
I
F
= 0.5 mA
-2
- 2.5
-3
0
21027
|S
21
|² - Insertion Loss (dB)
I
F
= 3mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
0.5
1
1.5
2
2.5
3
3.5
f - Frequency (GHz)
Fig. 5 -
Insertion Loss of One Diode Inserted in Series
with 50
Strip Line
0
|S
21
|² = |S
12
|² - Isolation (dB)
-5
- 10
- 15
V
R
= 0, diode zero-biased
- 20
- 25
0
21028
0.5
1
1.5
2
2.5
3
3.5
f - Frequency ( GHz )
Fig. 6 -
Isolation of One Diode Inserted in Series
with 50
Strip Line
I
P2
- Second Order Intercept Point (dBm)
150
100
f = 1.8 GHz
f = 0.9 GHz
50
0
0.1
1
10
21029
I
F
- Forward Current (mA)
Fig. 7 -
Second Order Intercept Point for One Diode Inserted
in 50
Strip Line
Rev. 1.6, 27-Apr-17
Document Number: 81836
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAR64V-05W
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOT-323
1.0 (0.039)
0.8 (0.031)
1.1 (0.043)
0.8 (0.031)
Vishay Semiconductors
2.2 (0.087)
2.0 (0.079)
0.15 (0.006)
0.08 (0.003)
0.1 (0.004)
0.0 (0.000)
8°
0.46 (0.018)
0.26 (0.010)
0.525 (0.021) ref.
0.4 (0.016)
0.2 (0.008)
2.45 (0.096)
2.15 (0.085)
1.35 (0.053)
1.15 (0.045)
foot print recommendation:
0.6 (0.024)
0.65 (0.026) typ
1.4 (0.055)
1.2 (0.047)
0.8 (0.031)
Document no.: 6.541-5040.02-4
Rev. 1 - Date: 06. April 2010
21113
0.65 (0.026)
1.3 (0.051)
Rev. 1.6, 27-Apr-17
Document Number: 81836
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.8 (0.071)
0°
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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