BGA420
Si-MMIC-Amplifier
in SIEGET
25-Technologie
•
Cascadable 50
Ω-gain
block
•
Unconditionally stable
•
Gain |S
21
|
2
= 13 dB at 1.8 GHz
IP
3out
= +13 dBm at 1.8 GHz
(V
D
= 3 V,
I
D
= typ. 6.7 mA)
•
Noise figure
NF
= 2.2 dB at 1.8 GHz
•
Reverse isolation > 28 dB and
return loss
IN
/
OUT
> 12 dB at 1.8 GHz
•
Pb-free (RoHS compliant) package
Circuit Diagram
1
2
GND
EHA07385
3
4
1
2
V
D
4
3
OUT
IN
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BGA420
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
T
S
= 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Marking
BLs
1, IN
Pin Configuration
2, GND 3, OUT 4, VD
Package
SOT343
Symbol
I
D
V
D
P
tot
P
RFin
T
j
T
A
T
stg
R
thJS
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Junction - soldering point
1)
1
For
≤
410
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2011-07-26
BGA420
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
AC characteristics
V
D
= 3 V,
Z
o
= 50
Ω
Device current
Insertion power gain
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Reverse isolation
f
= 1.8 GHz
Noise figure
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
Intercept point at the output
f
= 1 GHz
1dB compression point
f
= 1 GHz
Return loss input
f
= 1.8 GHz
Return loss output
f
= 1.8 GHz
Typical biasing configuration
+
V
D
100 pF
RF OUT
100 pF
10 nF
4
3
BGA 420
1
100 pF
RF IN
GND
EHA07386
Symbol
min.
I
D
|S
21
|
2
17
15
S12
NF
-
-
IP
3out
P
-1dB
RL
in
RL
out
-
10
-6
8
12
11
25
5.4
Values
typ.
6.7
19
17
13
28
max.
8
-
-
-
-
Unit
mA
dB
1.9
2.2
2.3
13
-2.5
11
16
2.3
2.6
2.7
-
-
-
-
dB
dBm
2
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
2
2011-07-26
BGA420
Typical S-Parameters at
T
A
= 25 °C
f
GHz
S
11
MAG
ANG
MAG
S
21
ANG
MAG
S
12
ANG
MAG
S
22
ANG
V
D
= 3 V,
Z
o
= 50
Ω
0.1
0.5686
-8.5
0.5
0.5066
-19.2
0.8
0.4404
-28.7
1
0.3904
-34.6
1.5
0.2841
-50.5
1.8
0.2343
-60.6
1.9
0.2136
-64.1
2
0.2062
-68.4
2.4
0.1688
-89.7
3
0.1558
-104.9
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
102
99.7
91.7
85.3
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
-18.2
-21.5
-22.2
-48
-147.5
Spice-model BGA 420
BGA 420-chip
including parasitics
+V
14
R
2
13
R
1
R
3
OUT
T1
R
1
R
2
R
3
C
1
C
P1
C
P2
C
P3
C
P4
EHA07387
T501
14.5kΩ
140Ω
2.4kΩ
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
IN
11
C
P1
C
1
T1
C
P2
12
GND
C
P3
C
P4
3
2011-07-26
BGA420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.21024
39.251
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
3
fA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
83.23
0.16493
10.526
0.25052
15
1.9289
0.70367
0.3641
0
0.48652
0
0
0.99469
-
A
-
A
Ω
V
-
deg
-
fF
-
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
RS =
1.0405
15.761
0.96647
0.037223
0.21215
0.12691
0.37747
0.19762
96.941
0.08161
0.75
1.11
300
-
fA
-
fA
A
Ω
-
V
fF
-
V
eV
K
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS =
2
fA
N=
1.02
-
20
Ω
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L
2
+V
C
1
C
2
L
BO
IN
L
BI
C
CB
L
1
14
11
BGA 420
Chip
12
C
BE
L
EI
13
L
CI
L
CO
OUT
C’-E’-
Diode
C
3
C
CE
L
EO
GND
EHA07388
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
C
1
=
C
2
=
C
3
=
L
1
=
L
2
=
0.36
0.4
0.3
0.15
0.36
0.4
95
6
132
28
88
8
0.6
0.4
nH
nH
nH
nH
nH
nH
fF
fF
fF
fF
fF
fF
nH
nH
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
4
2011-07-26
BGA420
Insertion power gain
|S
21
|
2
=
f
(f)
Insertion power gain
|S
21
|
2
=
f
(f)
V
D
= 3 V
V
D
,
I
D
= parameter
25
T
A
= parameter
22
dB
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
dB
18
TA=-20°C
TA=+25°C
TA=+75°C
|S
21
|
2
|S
21
|
2
0
1
16
14
12
10
15
10
8
6
5
4
2
0
-1
10
10
GHz
10
0
-1
10
10
0
GHz
10
1
f
f
Noise figure
NF
=
f
(f)
Noise figure
NF
=
f
(f)
V
D
= 3V
V
D
,I
D
= parameter
5
T
A
= parameter
3.5
dB
dB
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
TA=+75°C
TA=+25°C
TA=-20°C
2.5
NF
3
NF
0
1
2
2
1.5
1
1
0.5
0
-1
10
10
GHz
10
0
-1
10
10
0
GHz
10
1
f
f
5
2011-07-26
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