Preliminary Technical Information
GenX3
TM
1200V
IGBTs
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
IXGK82N120A3
IXGX82N120A3
V
CES
= 1200V
I
C110
= 82A
V
CE(sat)
≤
2.05V
TO-264 (IXGK)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
LRMS
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C ( Chip Capability )
= 110°C
= 25°C (Lead RMS Limit)
= 25°C, 1ms
Maximum Ratings
1200
1200
±20
±30
260
82
120
580
I
CM
= 164
@ 0.8 • V
CES
1250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
V
5.0
V
50
μA
2.5 mA
±100 nA
1.83
1.95
2.05
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
G
C
E
Tab
G
C
E
E
Tab
PLUS247
TM
(IXGX)
V
GE
= 15V, T
VJ
= 125°C, R
G
= 2Ω
Clamped Inductive Load
T
C
= 25°C
G = Gate
C = Collector
E
= Emitter
Tab = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
300
260
1.13/10
20..120/4.5..27
10
6
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
CE
= 0V
= 1mA, V
CE
= V
GE
Note 1, T
J
= 125°C
V
CE
= 0V, V
GE
= ±20V
I
C
= I
C110
, V
GE
= 15V, Note 2
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
1200
3.0
V
CE
= V
CES
, V
GE
= 0V
© 2009 IXYS CORPORATION, All Rights Reserved
DS100164A(10/09)
IXGK82N120A3
IXGX82N120A3
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
0.15
Inductive load, T
J
= 125°C
I
C
= 80A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2Ω
Note 3
Inductive load, T
J
= 25°C
I
C
= 80A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2Ω
Note 3
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
V
CE
= 25V, V
GE
= 0V, f = 1 MHz
I
C
= 60A, V
CE
= 10V, Note 2
Characteristic Values
Min.
Typ.
Max.
40
66
7700
520
190
340
54
146
34
75
5.5
265
780
12.5
32
77
6.7
340
1250
22.5
1300
20.0
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.10 °C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 AA ( IXGK) Outline
PLUS247
TM
(IXGX) Outline
Notes:
1. Part must be heatsunk for high-temp I
CES
measurement.
2. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
3. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
2.29
1.91
1.14
1.91
2.92
5.21
2.54
2.16
1.40
2.13
3.12
Inches
Min. Max.
.190
.090
.075
.045
.075
.115
.205
.100
.085
.055
.084
.123
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXGK82N120A3
IXGX82N120A3
Fig. 1. Output Characteristics @ T
J
= 25ºC
180
160
140
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
7V
80
40
5V
0
0
2
4
6
8
10
12
14
7V
9V
V
GE
= 15V
13V
11V
320
280
240
V
GE
= 15V
13V
11V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
C
- Amperes
I
C
-
Amperes
200
160
120
9V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
180
160
140
120
100
80
60
40
0.8
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5V
0.6
-50
-25
7V
V
GE
= 15V
13V
11V
1.8
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
1.6
I
C
= 164A
V
CE(sat)
- Normalized
I
C
- Amperes
9V
1.4
1.2
I
1.0
C
= 82A
I
C
= 41A
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.0
4.5
4.0
T
J
= 25ºC
180
160
140
120
100
80
60
82A
40
20
0
6
7
8
9
10
11
12
13
14
15
3.0
3.5
4.0
4.5
Fig. 6. Input Admittance
3.0
2.5
2.0
1.5
1.0
I
C
= 164A
I
C
-
Amperes
V
CE
- Volts
3.5
T
J
= 125ºC
25ºC
- 40ºC
41A
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
V
GE
- Volts
V
GE
- Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK82N120A3
IXGX82N120A3
Fig. 7. Transconductance
100
T
J
= - 40ºC
80
25ºC
12
10
8
6
4
20
2
0
0
20
40
60
80
100
120
140
160
180
200
0
0
50
100
150
200
250
300
350
16
14
V
CE
= 600V
I
C
= 82A
I
G
= 10mA
Fig. 8. Gate Charge
g
f s
-
Siemens
40
V
GE
- Volts
60
125ºC
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
Cies
180
160
140
120
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
I
C
- Amperes
100
80
60
40
T
J
= 125ºC
R
G
= 2Ω
dv / dt < 10V / ns
1,000
Coes
f
= 1 MHz
1.000
100
0
5
10
15
20
Cres
25
30
35
40
20
0
200
300
400
500
600
700
800
900
1000
1100
1200
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
0.200
0.100
Z
(th)JC
- ºC / W
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK82N120A3
IXGX82N120A3
Fig. 12. Inductive Switching
Energy Loss vs. Collector Current
30
E
off
25
V
CE
= 600V
E
on
12
30
E
off
10
25
V
CE
= 600V
E
on
Fig. 13. Inductive Switching
Energy Loss vs. Junction Temperature
12
----
----
10
R
G
= 2
Ω
,
V
GE
= 15V
R
G
= 2Ω
,
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
20
T
J
= 125ºC
8
E
on
- MilliJoules
20
I
C
= 80A
15
8
E
on
- MilliJoules
15
6
6
10
T
J
= 25ºC
4
10
I
C
= 40A
4
5
2
5
2
0
20
30
40
50
60
70
80
0
0
25
35
45
55
65
75
85
95
105
115
0
125
I
C
- Amperes
T
J
- Degrees Centigrade
Fig. 14. Inductive Turn-off
Switching Times vs. Collector Current
1.8
1.6
1.4
1.6
1.8
1.6
Fig. 15. Inductive Turn-off
Switching Times vs. Junction Temperature
0.8
1.4
1.2
1.0
0.8
0.6
t
fi
V
CE
= 600V
t
d(off)
- - - -
t
f i
V
CE
= 600V
t
d(off)
- - - -
R
G
= 2Ω , V
GE
= 15V
R
G
= 2Ω , V
GE
= 15V
0.7
0.6
0.5
t
d(off)
- Microseconds
t
f i
- Microseconds
1.2
1.0
0.8
0.6
0.4
0.2
20
30
40
50
60
70
80
T
J
= 25ºC
t
f i
- Microseconds
1.4
1.2
1.0
0.8
0.6
0.4
25
t
d(off)
- Microseconds
T
J
= 125ºC
I
C
= 40A, 80A
0.4
0.3
0.2
0.1
125
0.4
0.2
0.0
35
45
55
65
75
85
95
105
115
I
C
- Amperes
T
J
- Degrees Centigrade
Fig. 16. Inductive Turn-on
Switching Times vs. Collector Current
120
36
110
100
34
90
Fig. 17. Inductive Turn-on
Switching Times vs. Junction Temperature
42
100
t
r i
V
CE
= 600V
t
d(on)
- - - -
t
r i
V
CE
= 600V
t
d(on)
- - - -
40
38
R
G
= 2Ω , V
GE
= 15V
T
J
= 25ºC, 125ºC
R
G
= 2Ω , V
GE
= 15V
t
d(on)
- Nanoseconds
t
d(on)
- Nanoseconds
t
r i
- Nanoseconds
t
r i
- Nanoseconds
80
32
80
70
60
50
40
I
C
36
I
C
= 80A
34
32
30
= 40A
28
26
24
125
60
30
40
28
20
26
30
0
20
30
40
50
60
70
80
24
20
25
35
45
55
65
75
85
95
105
115
I
C
- Amperes
T
J
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_82N120A3(8T)6-23-09
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