ALM-GN001
GNSS Filter-LNA Front-End Module
Data Sheet
Description
Avago Technologies’ ALM-GN001 is an ultra low-noise
GNSS front-end module that combines a low-noise
amplifier (LNA) with a GNSS FBAR pre-LNA filter. The LNA
uses Avago Technologies’ proprietary GaAs Enhancement-
mode pHEMT process to achieve high gain with very low
noise figure and high linearity. Noise figure distribution
is very tightly controlled. A CMOS-compatible shutdown
pin is included either for turning the LNA on/off, or for
current adjustment. The integrated filter utilizes an Avago
Technologies’ leading-edge FBAR filter for exceptional
rejection at Cellular, DCS, PCS and WLAN band frequen-
cies. Bypass functionality with an external RF switch is
possible with separate RF switching.
The low noise figure and high gain, coupled with low
current consumption make it suitable for use in critical
low-power GNSS applications or during low-battery
situations.
Features
•
Operating Temperature Range -40
°C
to +85
°C
•
Very Low Noise Figure: 1.54 dB typ.
•
Exceptional Cell/DCS/PCS/WLAN-Band rejection
•
Advanced GaAs E-pHEMT & FBAR Technology
•
Shutdown current : < 1
mA
•
CMOS compatible shutdown pin (V
sd
)
•
ESD : > 1 kV at RFin pin
•
0.85 mm typical thickness
•
Adjustable bias current via single control voltage pin
•
Small package dimension: (2.3
×
1.7
×
0.85) mm
3
•
Meets MSL3, Lead-free and halogen free
Target Specifications (Typical performance @ 25
°C)
At 1.575 GHz, V
dd
= 2.7 V, I
dd
= 6 mA
•
Gain = 16 dB
•
NF = 1.54 dB
•
IIP3 = 2.5 dBm, IP1dB = -4 dBm
•
S11 = -8 dB, S22 =-13 dB
•
Rejection @ 824 – 849 MHz: 58 dBc
•
Rejection @ 880 – 924 MHz: 56 dBc
•
Rejection @ 1710 – 1785 MHz: 47 dBc
•
Rejection @ 1850 – 1910 MHz: 51 dBc
•
Rejection @ 2400 – 2570 MHz: 51 dBc
Component Image
Surface Mount (2.3
×
1.7
×
0.85) mm
3
6-lead DFN
V
dd
(pin 1)
V
sd
(pin 2)
RFin (pin 3)
RFOut (pin 6)
GN001
YMXXXX
TOP VIEW
LNA_In (pin 5)
Filter_Out (pin 4)
RFOut (pin 6)
LNA_In (pin 5)
Filter_Out (pin 4)
Gnd
(pin 7)
V
dd
(pin 1)
V
sd
(pin 2)
RFin (pin 3)
Application
•
GNSS Front-end Module
BOTTOM VIEW
Package marking provides orientation and identification:
“GN001“ = Product Code
“Y”
= Year of manufacture
“M” = Month of manufacture
“XXXX” = Last 4 digits of lot number
Application Circuit
+Vdd = 2.7 V
C
1
C
3
2
Vsd
3
L
4
RFin
4
Filter_Out
L
2
1
ALM-GN001
6
RFout
5
LNA_In
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
L
3
Absolute Maximum Rating
[1]
T
A
= 25
°
C
Symbol
V
dd
I
dd
P
in,max
Pdiss
T
j
T
STG
Parameter
Device Drain-to-Source Voltage
[2]
Drain Current
[2]
CW RF Input Power (V
dd
= 2.7 V, I
dd
= 6 mA)
Total Power Dissipation
[4]
Junction Temperature
Storage Temperature
Units
V
mA
dBm
mW
°C
°C
Absolute Max.
4.0
15
15
60
150
-65 to 150
Thermal Resistance
[3]
(V
dd
= 2.7 V, I
dd
= 6 mA), Θjc = 107
°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Thermal resistance measured using Infra-
Red measurement technique.
4. Board (module belly) temperature T
B
is 25
°C.
Derate 9.4 mW/°C for T
B
> 143
°C.
Electrical Specifications
T
A
= 25
°C,
Freq=1.575 GHz and 1.602 GHz, measured on board, as in Figure 1.
Table 1. Performance at V
dd
= V
sd
= 2.7 V, I
dd
= 6 mA (R2 = 12 kΩ) nominal operating conditions
at 1.575 GHz
Symbol
Passband Performance
G
NF
[1]
IP1dB
IIP3
[2]
S11
S22
S12
I
dd
I
sh
Gain
Noise Figure
Input 1dB Compressed Power
Input 3rd Order Intercept Point
(2-tone at Fc
±
1 MHz)
Input Return Loss
Output Return Loss
Reverse Isolation
Supply DC current at Shutdown voltage V
sd
= 2.7 V
Shutdown Current at V
sd
= 0 V
Worst-case relative to 1.575 GHz within
(824-924) MHz band, tested at 924 MHz
Worst-case relative to 1.575 GHz within
(1710-1785) MHz band, tested at 1710 MHz
Worst-case relative to 1.575 GHz within
(1850-1910) MHz band, tested at 1850 MHz
Worst-case relative to 1.575 GHz within
(2400-2570) MHz band, tested at 2400 MHz
Input 1 dB gain compression interferer
signal level at 890 MHz
Input 1 dB gain compression interferer
signal level at 1710 MHz
Input 1 dB gain compression interferer
signal level at 1850 MHz
Out of Band Input 3rd Order Intercept Point
(2-tone at 1712.7 MHz and 1850 MHz)
dB
dB
dBm
dBm
dB
dB
dB
mA
mA
dBc
dBc
dBc
dBc
dBm
dBm
dBm
dBm
14.2
-
-
-
-
-
-
2.8
-
42
36
42
42
-
-
-
-
16.0
1.54
-4
2.5
-8
-13
-24
6
0.5
56
47
51
51
> 40
38
39
48
18
2.2
-
-
-
-
-
10.5
-
-
-
-
-
-
-
-
-
12.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14.9
1.84
-4
2.5
-10
-11
-25
-
-
-
-
-
-
-
-
-
-
17
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
at 1.602 GHz
Max.
Min.
Typ.
Max.
Parameter and Test Condition
Unit
Min.
Typ.
Out-of-Band Performance
B5 / CDMA / GSM850 /
B8 / GSM900 Rejection
B3 / GSM1700 Rejection
B2 / CDMA1900 /
GSM1900 Rejection
ISM / WiMax Rejection
IP1dB
890MHz
IP1dB
1710MHz
IP1dB
1850MHz
OOB IIP3
[3]
2
Table 2. Performance at V
dd
= V
sd
= 1.8 V, I
dd
= 6 mA (R2 = 0 kΩ) nominal operating conditions
Symbol
Passband Performance
G
NF
[1]
IP1dB
IIP3
[2]
S11
S22
S12
I
dd
I
sh
Gain
Noise Figure
Input 1dB Compressed Power
Input 3rd Order Intercept Point (2-tone at Fc
±
1 MHz)
Input Return Loss
Output Return Loss
Reverse Isolation
Supply DC current at Shutdown (SD) voltage V
sd
= 1.8 V
Shutdown Current at V
sd
= 0 V
Worst-case relative to 1.575 GHz within (824-924) MHz band,
tested at 924 MHz
Worst-case relative to 1.575 GHz within (1710-1785) MHz band,
tested at 1710 MHz
Worst-case relative to 1.575 GHz within (1850-1910) MHz band,
tested at 1850 MHz
Worst-case relative to 1.575 GHz within (2400-2570) MHz band,
tested at 2400 MHz
dB
dB
dBm
dBm
dB
dB
dB
mA
mA
dBc
dBc
dBc
dBc
15
1.59
-9.8
2.1
-9
-19
-23
6
0.5
55
46
50
50
Parameter and Test Condition
Units
at 1.575 GHz (Typ.)
Out-of-Band Performance
B5 / CDMA / GSM850 /
B8 / GSM900 Rejection
B3 / GSM1700 Rejection
B2 / CDMA1900 /
GSM1900 Rejection
ISM / WiMax Rejection
Notes:
1. Losses from demoboard de-embedded
2. 1.575 GHz IIP3 test condition: FRF1 = 1574 MHz, FRF2 = 1576 MHz with input power of -20 dBm per tone measured at the worst-case side band
3. 1.575 GHz IIP3 test condition: FRF1 = 1712.7 MHz, FRF2 = 1850 MHz with input power of 10 dBm per tone measured at the worst-case side band
3
Circuit Symbol
L1
L2
L3
L4
C1
C3
C4
R1
R2
Size
0402
0402
0402
0402
0402
0402
0402
0402
0402
Description
22 nH Inductor (Taiyo Yuden HK100522NJ-T)
3.9 nH Inductor (Taiyo Yuden HK10053N9S-T)
9.1 nH Inductor (Taiyo Yuden HK10059N1J-T)
12 nH Inductor (Taiyo Yuden HK100512NJ-T)
0.1
mF
Capacitor (Murata GRM155R71C104KA88D)
15 pF Capacitor (Murata GJM1555C1H150JB01D)
6.8 pF Capacitor (Murata GJM1555C1H6R8DB01D)
12
Ω
Resistor (Kamaya RMC1/16S-120JTH)
12 kΩ Resistor (Kamaya RMC1/16SK123FTH)
Figure 1. Demoboard and application circuit components table
4
R
1
+Vdd = 2.7 V
C
1
L
1
C
3
L
2
1
ALM-GN001
6
RFout
2
C
4
R
2
Vsd
3
RFin
L
4
5
LNA_In
L
3
4
Filter_Out
Figure 2. Application Circuit
Notes:
1. RF input match is achieved by a single shunt inductor, L4. It is used to match the module for best NF and S11.
2. The output of the module is matched.
3. Best noise performance is obtained using high-Q wirewound inductors. Low noise figures are also obtainable with standard 0402 chip inductors.
4. C1 is for low frequency stability and C3 is the bypass capacitor for RF matching and linearity.
5. Bias control is achieved by either varying the V
sd
voltage with R2, or fixing the V
sd
voltage to V
dd
and adjusting R2 for the desired current. The
component values specified in Table 1 results in 6 mA current drain. Noise figure, Gain and linearity can be further improved by increasing the bias
current.
6. L1 and R1 isolates the demoboard from external disturbances during measurement. They are not needed in actual application. Likewise, C4
mitigate the effect of external noise pickup on the V
sd
line. This component is not required in actual operation.
7. L3 matches the filter output to the input of the LNA for optimum noise performance.
5
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