DSEI2X101 datasheet, PDF - EEWORLD Datasheet

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DSEI2X101: Description96 A, 600 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size549KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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DSEI2X101 Overview

96 A, 600 V, SILICON, RECTIFIER DIODE

DSEI2X101 Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	2
Processing package description	MINIBLOC-4
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	UNSPECIFIED
terminal coating	tin
Terminal location	UPPER
Packaging Materials	Plastic/Epoxy
structure	SEPARATE, 2 ELEMENTS
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	250 W
Diode type	rectifier diode
application	FAST RECOVERY
Phase	1
Maximum reverse recovery time	0.0350 us
Maximum repetitive peak reverse voltage	600 V
Maximum average forward current	96 A
Maximum non-repetitive peak forward current	1200 A

DSEI2X101 Preview

DSEI2x101-06A

FRED

RRM

FAV

600 V

96 A

35 ns

Fast Recovery Epitaxial Diode

Low Loss and Soft Recovery

Parallel legs

Part number

DSEI2x101-06A

Backside: isolated

Features / Advantages:

●

Planar passivated chips

●

Low leakage current

●

Very short recovery time

●

Improved thermal behaviour

●

Very low Irm-values

●

Very soft recovery behaviour

●

Avalanche voltage rated for reliable operation

●

Soft reverse recovery for low EMI/RFI

●

Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Applications:

●

Antiparallel diode for high frequency

switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode

●

Rectifiers in switch mode power

supplies (SMPS)

●

Uninterruptible power supplies (UPS)

Package:

SOT-227B (minibloc)

●

Isolation Voltage: 3000 V~

●

Industry standard outline

●

RoHS compliant

●

Epoxy meets UL 94V-0

●

Base plate: Copper

internally DCB isolated

●

Advanced power cycling

Terms and Conditions of Usage

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130703b

DSEI2x101-06A

Fast Diode

Symbol

RSM

RRM

Definition

Conditions

= 25°C

= 125°C

= 25°C

= 150 °C

d = 0.5

= 150 °C

0.70

4.7

0.10

= 25°C

t = 10 ms; (50 Hz), sine; V

= 0 V

= 400 V f = 1 MHz

= 100 A; V

= 300 V

reverse recovery time

Ratings

min.

typ.

max. Unit

600

1.25

1.40

1.17

1.70

mΩ

K/W

250

1.20

107

150

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current, drain current

= 600 V

= 480 V

= 100 A

= 200 A

= 100 A

= 200 A

forward voltage drop

FAV

thJC

thCH

tot

FSM

average forward current

= 70 °C

rectangular

threshold voltage

slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation

max. forward surge current

junction capacitance

max. reverse recovery current

0.5 K/W

= 45°C

= 25°C

= 25 °C

= 100 °C

= 25 °C

= 100 °C

-di

/dt = 600 A/µs

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130703b

DSEI2x101-06A

Package

Symbol

RMS

stg

Weight

Spp/App

Spb/Apb

ISOL

isolation voltage

t = 1 second

t = 1 minute

50/60 Hz, RMS; I

ISOL

≤

1 mA

mounting torque

terminal torque

creepage distance on surface | striking distance through air

terminal to terminal

terminal to backside

SOT-227B (minibloc)

Definition

RMS current

virtual junction temperature

operation temperature

storage temperature

Ratings

Conditions

per terminal

min.

-40

typ.

max.

150

125

150

Unit

°C

1.1

10.5

8.6

3.2

6.8

3000

2500

1.5

Product Marking

Part No.

Logo

XXXXX

Zyyww

abcd

Assembly Line

DateCode

Assembly Code

Ordering

Standard

Ordering Number

DSEI2x101-06A

Marking on Product

DSEI2x101-06A

Delivery Mode

Tube

Quantity

Code No.

468029

Equivalent Circuits for Simulation

threshold voltage

slope resistance *

Fast

Diode

* on die level

= 150 °C

0 max

0.7

3.5

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130703b

DSEI2x101-06A

Outlines SOT-227B (minibloc)

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130703b

DSEI2x101-06A

Fast Diode

150

125

100

= 100°C

= 300 V

= 200 A

100 A

50 A

= 200 A

100 A

50 A

= 150°C

0.0

100°C

25°C

[A]

1000

200

400

600

800

1000

= 100°C

= 300 V

[A]

[µC]

100

0.5

1.0

1.5

[V]

Fig. 1 Forward current

versus V

1.4

-di

/dt [A/µs]

Fig. 2 Typ. reverse recov. charge

versus -di

/dt

260

240

= 100°C

= 300 V

-di

/dt [A/µs]

Fig. 3 Typ. peak reverse current

versus -di

/dt

3.0

= 100°C

= 300 V

2.5

2.0

1.5

1.0

0.5

200

400

600

800

0.0

1000

1.2

220

1.0

200

[ns]

180

160

140

120

100

150

200

400

600

800

1000

= 200 A

100 A

50 A

0.8

[V]

[µs]

0.6

0.4

[°C]

Fig. 4 Typ. dyn. parameters

, I

versus T

-di

/dt [A/µs]

Fig. 5 Typ. recovery time

versus -di

/dt

-di

/dt [A/µs]

Fig. 6 Typ. peak forward voltage

and t

versus di

/dt

D=0.7

Constants for Z

thJC

calculation:

thi

[K/W]

thJC

[K/W]

0.5

0.3

0.2

0.1

[s]

0.1

0.05

Single Pulse

0.05

0.001

0.01

0.1

0.020

0.050

0.076

0.240

0.114

0.00002

0.00081

0.01000

0.09400

0.45000

t [s]

Fig. 7 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130703b

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