EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF1010EZS

Description
75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size407KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF1010EZS Overview

75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF1010EZS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)99 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)75 A
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)140 W
Maximum pulsed drain current (IDM)340 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95483C
Features
l
l
l
l
l
l
l
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 60V
R
DS(on)
= 8.5mΩ
G
S
Description
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
TO-220AB
IRF1010EZPbF
D
2
Pak
TO-262
IRF1010EZSPbF IRF1010EZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
84
60
75
340
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
j
HEXFET
®
is a registered trademark of International Rectifier.
www.irf.com
1
07/06/10

IRF1010EZS Related Products

IRF1010EZS IRF1010EZ
Description 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 99 mJ 99 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 75 A 75 A
Maximum drain current (ID) 75 A 75 A
Maximum drain-source on-resistance 0.0085 Ω 0.0085 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 140 W 140 W
Maximum pulsed drain current (IDM) 340 A 340 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Apply for TI samples for free, share your samples and win prizes
I looked at the sample application form and didn't apply for anything I didn't need. But TI is very powerful, everyone knows this. If I want to show it, I'll show the samples I applied for before. As ...
yyhhgg TI Technology Forum
Ask a question about the axsample example of wm5.0SDK
I can display axsample on the WM5 simulator, but why can't the controls be displayed when connected to a mobile phone (I have added the certificate to the mobile phone according to the instructions)? ...
weijinping Embedded System
Embedded Linux Experience Talk——by edu1182016
@edu1182016 Share some practical Linux tips with you Analysis of the working mechanism of Linux character device driver Common operations under Linux Beginner's learning method of embedded development...
okhxyyo Linux and Android
I'm a newbie, please help me
My master's graduation project is embedded hardware design, so I have to make a PCB first. I am a cross-disciplinary person and I have only a limited understanding of these things. I just came in and ...
EVOR2010 PCB Design
[Feiling S5PV210 development board knowledge sharing] What is the difference between WinCE and Linux?
Advantages of embedded Linux OS compared with Windows CE: First: Linux is open source, and many Linux enthusiasts around the world are strong technical supporters of Linux developers; Windows CE 6.0 k...
forlinx2013 Embedded System
The influence of AD630 frequency on voltage output
I found a problem when using the AD630 chip. The connection method is according to the datasheet. [/size][/font][color=black][backcolor=rgb(245, 245, 245)][font=Arial, sans-serif][size=10.5pt]1[/size]...
gaosjp Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2641  1975  1670  2153  1619  54  40  34  44  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号