Fast page mode(1024-column random access),Read-modify-write,
RAS-only refresh, CAS before RAS refresh, Hidden refresh
capabilities.
Early-write mode, CAS and OE to control output buffer impedance
1024 refresh cycles every 16.4ms (A
0
~A
9
)
1024 refresh cycles every 128ms (A
0
~A
9
) *
* :Applicable to self refresh version (M5M44800CJ,TP-5S,-6S,-7S
:option) only
(5V)V
CC
1
DQ
1
2
DQ
2
3
DQ
3
4
DQ
4
5
NC 6
W
A
9
7
9
RAS 8
A
0
10
A
1
11
A
2
12
A
3
13
(5V)V
CC
14
28 V
SS
(0V)
27 DQ
8
26 DQ
7
25 DQ
6
24 DQ
5
23 CAS
22 OE
21 NC
20 A
8
19 A
7
18 A
6
17 A
5
16 A
4
15 V
SS
(0V)
Outline 28P3Y-H(400mil TSOP Normal Bend)
APPLICATION
Microcomputer memory, Refresh memory for CRT
NC:NO CONNECTION
PIN DESCRIPTION
Pin name
A
0
~A
9
DQ
1
~DQ
8
RAS
CAS
W
OE
Vcc
Vss
Function
Address inputs
Data inputs/outputs
Row address strobe input
Column address strobe input
Write control input
Output enable input
Power supply (+5V)
Ground (0V)
1
M5M44800CJ,TP-5,-5S:Under development
MITSUBISHI LSIs
M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
FUNCTION
In addition to normal read, write, and read-modify-write operations
the M5M44800CJ, TP provides a number of other functions, e.g.,
fast page mode, RAS-only refresh, and delayed-write. The input
conditions for each are shown in Table 1.
Table 1 Input conditions for each mode
Operation
Read
Write (Early write)
Write (Delayed write)
Read-modify-write
RAS only refresh
Hidden refresh
CAS before RAS (Extended *) refresh
Inputs
RAS
ACT
ACT
ACT
ACT
ACT
ACT
ACT
ACT
NAC
CAS
ACT
ACT
ACT
ACT
NAC
ACT
ACT
ACT
DNC
W
NAC
ACT
ACT
ACT
DNC
DNC
DNC
DNC
DNC
OE
ACT
DNC
DNC
ACT
DNC
ACT
DNC
DNC
DNC
Row
address
Column
address
Input/Output
APD
APD
APD
APD
APD
DNC
DNC
DNC
DNC
APD
APD
APD
APD
DNC
DNC
DNC
DNC
DNC
Input
OPN
VLD
VLD
VLD
DNC
OPN
DNC
DNC
DNC
Output
VLD
OPN
IVD
VLD
OPN
VLD
OPN
OPN
OPN
Refresh
YES
YES
YES
YES
YES
YES
YES
YES
NO
Remark
Fast page
mode
identical
Self refresh
*
Stand-by
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : invalid, APD : applied, OPN : open
BLOCK DIAGRAM
COLUMN ADDRESS
STROBE INPUT CAS
ROW ADDRESS RAS
STROBE INPUT
WRITE CONTROL
INPUT
W
A
0
~A
8
V
CC
(5V)
CLOCK GENERATOR
CIRCUIT
V
CC
(5V)
V
SS
(0V)
V
SS
(0V)
(8)
DATA IN
BUFFER
COLUMN DECODER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
SENSE REFRESH
AMPLIFIER & I /O CONTROL
ADDRESS INPUTS
ROW &
COLUMN
ADDRESS
BUFFER
ROW
A
0
~
A
9
DECODER
MEMORY CELL
(4194304BITS)
(8)
DATA OUT
BUFFER
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
DATA
INPUTS / OUTPUTS
OE OUTPUT ENABLE
INPUT
2
M5M44800CJ,TP-5,-5S:Under development
MITSUBISHI LSIs
M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
O
P
d
T
opr
T
stg
Parameter
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Conditions
With respect to V
SS
Ratings
-1~7
-1~7
-1~7
50
1000
0~70
-65~150
Unit
V
V
V
mA
mW
˚C
˚C
Ta=25˚C
RECOMMENDED OPERATING CONDITIONS
(Ta=0~70˚C, unless otherwise noted)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage, all inputs
Min
4.5
0
2.4
-0.5 * *
Limits
Nom
5.0
0
Max
5.5
0
6.0
0.8
(Note 1)
Unit
V
V
V
V
Note 1 : All voltage values are with respect to Vss.
* * : V
IL(min)
is -2.0V when pulse width is less than 25ns. (Pulse width is with respect to V
SS
.)
ELECTRICAL CHARACTERISTICS
(Ta=0~70˚C, V
CC
=5V±10%, V
SS
=0V, unless otherwise noted)
(Note 2)
Symbol
V
OH
V
OL
I
OZ
I
I
I
CC1 (AV)
Parameter
High-level output voltage
Low-level output voltage
Off-state output current
Input current
M5M44800C-5,-5S
Average supply current
M5M44800C-6,-6S
from V
CC,
operating
(Note 3,4,5)
M5M44800C-7,-7S
Test conditions
I
OH
=-5mA
I
OL
=4.2mA
Q floating, 0V
≤
V
OUT
≤
5.5V
0V
≤
V
IN
≤
+6.0V, Other inputs pins=0V
RAS, CAS cycling
t
RC
=t
WC
=min.
output open
RAS= CAS =V
IH
, output open
RAS= CAS
≥
V
CC
-0.5V
output open
RAS cycling, CAS= V
IH
t
RC
=min.
output open
RAS=V
IL
, CAS cycling
t
PC
=min.
output open
CAS before RAS refresh cycling
t
RC
=min.
output open
Min
2.4
0
-10
-10
Limits
Typ
I
CC2
Supply current from V
CC
, stand-by
(Note 6)
I
CC3 (AV)
M5M44800C-5,-5S
Average supply current
M5M44800C-6,-6S
from V
CC,
RAS only
refresh mode (Note 3,5)
M5M44800C-7,-7S
M5M44800C-5,-5S
Average supply current
M5M44800C-6,-6S
from V
CC,
Fast Page
(Note 3,4,5)
M5M44800C-7,-7S
Mode
M5M44800C-5,-5S
Average supply current
from V
CC
, CAS before RAS
M5M44800C-6,-6S
refresh mode
(Note 3,5)
M5M44800C-7,-7S
I
CC4(AV)
I
CC6(AV)
Max
Vcc
0.4
10
10
90
75
65
2
1.0
0.1 *
90
75
65
90
75
65
80
65
55
Unit
V
V
µA
µA
mA
mA
mA
mA
mA
I
CC8(AV)
*
Average supply current from V
CC,
Extended-Refresh mode
RAS cycling CAS
≤
0.2V or CAS
before RAS refresh cycling
RAS
≤
0.2V or
≥
V
CC
-0.2V
CAS
≤
0.2V or
≥
V
CC
-0.2V
(Note 6)
W
≤
0.2V or
≥
V
CC
-0.2V
OE
≤
0.2V or
≥
V
CC
-0.2V
A
0
~A
9
≤
0.2V or
≥
V
CC
-0.2V, DQ=open
t
RC
=125µs, t
RAS
=t
RAS
min~1µs
(Note 6)
RAS=CAS
≤
0.2V
output open
150
µA
I
CC9(AV)
*
Note
Note
Note
Note
Average supply current from V
CC,
Self-Refresh mode
150
µA
2: Current flowing into an IC is positive, out is negative.
3: I
CC1 (AV)
, I
CC3 (AV)
, I
CC4 (AV)
and I
CC6 (AV)
are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: I
CC1 (AV)
and I
CC4 (AV)
are dependent on output loading. Specified values are obtained with the output open.
5: Column address can be changed once or less while RAS=V
IL
and CAS=V
IH
3
M5M44800CJ,TP-5,-5S:Under development
MITSUBISHI LSIs
M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
CAPACITANCE
(Ta=0~70˚C, V
CC
=5V±10%, V
SS
=0V, unless otherwise noted)
Limits
Symbol
C
I (A)
C
I (CLK)
C
I / O
Parameter
Input capacitance, address inputs
Input capacitance, clock inputs
Input/Output capacitance, data ports
Test conditions
V
I
=V
SS
f=1MHz
V
I
=25mVrms
Min
Typ
Max
5
7
7
Unit
pF
pF
pF
SWITCHING CHARACTERISTICS
(Ta=0~70˚C, V
CC
= 5V±10%, V
SS
=0V, unless otherwise noted, see notes 6,13,14)
Limits
Symbol
t
CAC
t
RAC
t
AA
t
CPA
t
OEA
t
CLZ
t
OFF
t
OEZ
Parameter
Access time from CAS
Access time from RAS
Column address access time
Access time from CAS precharge
Access time from OE
Output low impedance time from CAS low
Output disable time after CAS high
Output disable time after OE high
(Note 7,8)
(Note 7,9)
(Note 7,10)
(Note 7,11)
(Note 7)
(Note 7)
(Note 12)
(Note 12)
M5M44800C-5,-5S M5M44800C-6,-6S M5M44800C-7,-7S
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Min
Max
13
50
25
30
13
Min
Max
15
60
30
35
15
Min
Max
20
70
35
40
20
5
13
13
5
15
15
5
20
20
Note 6:An initial pause of 500µs is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh
cycles).
Note the RAS may be cycled during the initial pause. And 8 initialization cycles are required after prolonged periods (greater than 16.4ms) of RAS
inactivity before proper device operation is achieved.
Note
7:Measured with a load circuit equivalent to 2TTL loads and 100pF.
Note
8:Assumes that
t
RCD
≥
t
RCD(max)
and
t
ASC
≥
t
ASC(max)
.
Note
9:Assumes that
t
RCD
≤
t
RCD(max
) and
t
RAD
≤
t
RAD(max)
. If
t
RCD
or
t
RAD
is greater than the maximum recommended value shown in this table,
t
RAC
will
increase by amount that
t
RCD
exceeds the value shown.
nOR10:Assumes
that
t
RAD
≥
t
RAD(max)
and
t
ASC
≤
t
ASC(max)
.
Note11:Assumes
that
t
CP
≤
t
CP(max)
and
t
ASC
≥
t
ASC(max)
.
Note12:
t
OFF(max)
,
t
OEZ(max)
defines the time at which the output achieves the high impedance state (I
OUT
≤
±10µA ) and is not reference to V
OH(min)
or
V
OL(max)
.
4
M5M44800CJ,TP-5,-5S:Under development
MITSUBISHI LSIs
M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
I wanted to test more indicators, but unfortunately I don't have the relevant equipment. I think the Yi Power Supply should be very good, and I hope to have a chance to use it....
[i=s]This post was last edited by qwqwqw2088 on 2019-5-7 07:41[/i] [b][size=3]I. I have a demo board of AWR1642. I am planning to make a 77G millimeter-wave radar that meets customer needs. However, I...
Lianli Electric Technology Co., Ltd. is recruiting for the following positions:Job title: LED packaging sample clerk
Job requirements:
. Make LED plug-in, SMD, high-power samples,
1. Skilled in die bo...
When it comes to programmers, everyone will think of a down-to-earth and hardworking image. Today, I will bring you an interesting story about the most idle and lazy programmer in the world. During a ...
At present, the traffic congestion in cities is quite serious. According to relevant news reports: In China, the traffic congestion has expanded from megacities such as Beijing, Shanghai, and Guang...[Details]
China's new energy vehicles are in a transition period from research and development to real industrial development. In 2012, with the intensive launch of new energy vehicle policy planning, the de...[Details]
Microcontrollers (MCUs), which are widely used in automotive electronics, are rapidly facing time and cost pressures. The main advantage of using MCUs has always been to create high-level system in...[Details]
No matter which processor you are learning, the first thing you need to understand is the registers and working mode of the processor.
ARM has 37 registers, including 31 general registers and ...[Details]
Images in science fiction movies often break through the limits of reality, such as in the movie "Minority Report." Tom Cruise uses a multi-touch screen to browse information. Capacitive sensing te...[Details]
With the continuous improvement of the requirements of intelligent building security systems and the continuous improvement of people's safety awareness, indoor anti-theft has gradually attracted peop...[Details]
Xiaomi, a well-known Internet phone in mainland China, won a million-unit order contract from China Unicom on November 20 last year, which made Xiaomi famous in mainland China. In April this year...[Details]
LED technology has made rapid progress, and improvements in chip design and materials have promoted the development of brighter and more durable light sources, and the scope of light source applica...[Details]
LED lighting: Basic circuit design can be completed in as little as one day
Semiconductor manufacturers are also getting involved in the LED lighting business. The power circuit of LED req...[Details]
Liquid crystal display (LCD) panels have a wide range of applications, from small portable electronic devices to large fixed devices, including digital cameras, laptops, personal data assistants, d...[Details]
1 Introduction
Ultrasound refers to elastic vibration with a frequency higher than the audible frequency limit (i.e., in the frequency band above 20 kHz). The propagation process of this vib...[Details]
The ARINC429 bus is one of the most commonly used communication buses between various subsystems of avionics. As the "skeleton" of modern avionics systems, once the bus system or the attached airbo...[Details]
When the so-called "copycat phones" that flood the domestic mobile phone market move towards large screens, stereo amplifiers, touch controls, and even GPS navigation and mobile TV, the homogeneity...[Details]
The future energy storage hotspot is not coal or iron ore, but lithium. This lightest metal in nature may be the heaviest resource in the future energy landscape. China launched an ambitious electr...[Details]
The power consumption of a switching power supply includes fixed losses caused by parasitic resistances such as semiconductor switches, magnetic components, and wiring, as well as switching losses ...[Details]
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
