TS27M2, TS27M2A, TS27M2B
Low-power CMOS dual operational amplifiers
Features
■
■
■
■
■
■
Wide supply voltage range: 3 to 16 V
Ultra-low consumption: 150 µA/op typ
Output voltage swing to ground
Excellent phase margin on capacitive load
Gain bandwidth product: 1 MHz typ
Vio down to 2 mV max. (B version)
N
DIP8
(Plastic package)
Description
The TS27x2 series are low-cost and low-power
dual operational amplifiers designed to operate
with high-voltage single or dual supplies. These
operational amplifiers use the ST silicon gate
CMOS process, providing an excellent
consumption-speed ratio thanks to three different
power consumptions, making them ideal for low-
consumption applications:
I
CC
= 10 µA/amp: TS27L2 (very low power),
I
CC
= 150 µA/amp: TS27M2 (low power) and
I
CC
= 1 mA/amp: TS272 (high speed)
The devices also offer a very high input
impedance and extremely low input currents.
Their main advantage compared to JFET devices
is the very low input current drift with temperature
(Figure
3).
D
SO-8
(Plastic micropackage)
P
TSSOP8
(Thin shrink small outline package)
Pin connections (top view)
Out1
In1-
In1+
V
CC-
1
2
3
4
_
+
_
+
8
7
6
5
V
CC+
Out2
In2-
In2+
August 2009
Doc ID 2306 Rev 2
1/14
www.st.com
14
Absolute maximum ratings and operating conditions
TS27M2, TS27M2A, TS27M2B
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC+
Vid
V
i
I
o
I
in
R
thja(4)(5)
T
stg
T
j
Absolute maximum ratings
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Output current for V
CC+
≥
15V
Input current
SO-8
DIP8
TSSOP8
Storage temperature range
Maximum junction temperature
HBM: human body model
(6)
TS27M2x/Ax/Bx
18
±18
-0.3 to 18
±30
±5
125
85
120
-65 to +150
150
500
100
1.5
Unit
V
V
V
mA
mA
°C/W
°C
°C
V
V
kV
ESD
MM: machine model
(7)
CDM: charged device model
(8)
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive
supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
are typical values.
6. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
7. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5
Ω).
This is done for all couples of
connected pin combinations while the other pins are floating.
8. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
Table 2.
Symbol
V
CC+
V
icm
Toper
Operating conditions
Value
Parameter
TS27M2C/AC/BC
Supply voltage
Common mode input voltage
range
Operating free air temperature
range
0 to +70
TS27M2I/AI/BI
3 to 16
0 to V
CC+
- 1.5
-40 to +125
-55 to +125
TS27M2M/AM/BM
V
V
°C
Unit
2/14
Doc ID 2306 Rev 2
TS27M2, TS27M2A, TS27M2B
Figure 1.
Absolute maximum ratings and operating conditions
Simplified schematic diagram (for 1/2 TS27M2)
Output
T
16
T
3
T
15
T
10
T
11
T
12
T
8
T
6
R1
T
2
Input
C1
T
7
V
CC
T
5
T
1
T
27
Input
T
4
T
9
T
13
T
23
T
14
T
28
T
22
T
29
T
26
R
2
T
25
T
24
T
17
T
18
T
19
Doc ID 2306 Rev 2
T
20
T
21
V
CC
3/14
Electrical characteristics
TS27M2, TS27M2A, TS27M2B
2
Table 3.
Electrical characteristics
Electrical characteristics at V
CC
+ = +10 V, V
CC
- = 0 V, T
amb
= +25° C
(unless otherwise specified)
TS27M2xC
Parameter
Min.
Typ.
Max.
Symbol
TS27M2xI
TS27M2xM
Min.
Typ.
Max.
Unit
DC performance
Input offset voltage
V
O
= 1.4 V, V
ic
= 0 V
V
io
T
min
≤
T
amb
≤
T
max
TS27M2
TS27M2A
TS27M2B
TS27M2
TS27M2A
TS27M2B
1.1
0.9
0.25
10
5
2
12
6.5
3
10
5
2
12
6.5
3.5
1.1
0.9
0.25
mV
DV
io
I
io
Input offset voltage drift
Input offset current
(1)
V
ic
= 5 V, V
O
= 5 V
T
min
≤
T
amb
≤
T
max
Input bias current
(1)
V
ic
= 5 V, V
O
= 5 V
T
min
≤
T
amb
≤
T
max
High level output voltage
V
id
= 100 mV, R
L
= 100 lΩ
T
min
≤
T
amb
≤
T
max
Low level output voltage
V
id
= -100 mV
Large signal voltage gain
V
iC
= 5 V, R
L
= 100 kΩ, V
o
= 1 V to 6 V
T
min
≤
T
amb
≤
T
max
Common mode rejection ratio
V
iC
= 1 V to 7.4 V, V
o
= 1.4 V
Supply voltage rejection ratio
V
CC+
= 5 V to 10 V, V
o
= 1.4 V
Supply current (per amplifier)
A
v
= 1, no load, V
o
= 5 V
T
min
≤
T
amb
≤
T
max
Output short circuit current
V
o
= 0 V, V
id
= 100 mV
Output sink current
V
o
= V
CC
, V
id
= -100 mV
45
34
30
20
65
60
8.7
8.6
2
1
100
1
150
8.9
8.7
8.5
50
50
30
10
65
60
200
250
2
1
200
1
300
8.9
µV/°C
pA
I
ib
pA
V
OH
V
V
OL
50
50
mV
A
vd
V/mV
CMR
SVR
80
80
150
80
80
150
200
300
dB
dB
I
CC
µA
I
o
I
sink
60
45
60
45
mA
mA
4/14
Doc ID 2306 Rev 2
TS27M2, TS27M2A, TS27M2B
Table 3.
Electrical characteristics
Electrical characteristics at V
CC
+ = +10 V, V
CC
- = 0 V, T
amb
= +25° C
(unless otherwise specified) (continued)
TS27M2xC
Parameter
Min.
Typ.
Max.
Symbol
TS27M2xI
TS27M2xM
Min.
Typ.
Max.
Unit
AC performance
GBP
Gain bandwidth product
A
v
= 40 dB, R
L
= 100 kΩ, C
L
= 100 pF,
f
in
= 100 kHz
Slew rate at unity gain
R
L
= 100 kΩ C
L
= 100 pF, V
i
= 3 to 7 V
,
Phase margin at unity gain
A
v
= 40 dB, R
L
= 100 kΩ C
L
= 100 pF
,
Overshoot factor
Equivalent input noise voltage
f = 1 kHz, R
s
= 100
Ω
Channel separation
0.5
1
0.5
1
MHz
SR
φm
K
OV
e
n
V
o1
/V
o2
0.3
0.6
45
30
38
120
0.3
0.6
45
30
38
120
V/μs
Degrees
%
nV
-----------
-
Hz
dB
1. Maximum values including unavoidable inaccuracies of industrial tests.
Doc ID 2306 Rev 2
5/14
Embedded System
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