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TK5Q60WS1VQ

Description
MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC
Categorysemiconductor    Discrete semiconductor   
File Size242KB,11 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TK5Q60WS1VQ Overview

MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC

TK5Q60WS1VQ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-251-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current5.4 A
Rds On - Drain-Source Resistance770 mOhms
Vgs th - Gate-Source Threshold Voltage2.7 V to 3.7 V
Vgs - Gate-Source Voltage30 V
Qg - Gate Charge10.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation60 W
Height6.1 mm
Length6.65 mm
Transistor Type1 N-Channel
Width2.3 mm
Fall Time7 ns
NumOfPackaging1
Rise Time18 ns
Factory Pack Quantity75
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time40 ns
Unit Weight0.139332 oz
TK5Q60W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK5Q60W
1. Applications
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 0.77
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.27 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
IPAK
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
5.4
21.6
60
71
1.4
5.4
21.6
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2012-09
2014-01-05
Rev.2.0
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