TC1410/TC1410N
0.5A High-Speed MOSFET Drivers
Features
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Input Withstands Negative Inputs Up to 5V
• Electrostatic Discharge (ESD) Protected: 2.0 kV
(HBM) and 400V (MM)
• High Peak Output Current: 0.5A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 16V
• High Capacitive Load Drive Capability:
- 500 pF in 25 ns
• Short Delay Time: 30 ns typical
• Consistent Delay Times With Changes in Supply
Voltage
• Matched Delay Times
• Low Supply Current
- With Logic ‘1’ Input: 500 µA
- With Logic ‘0’ Input: 100 µA
• Low Output Impedance: 16Ω
• Available in Space-Saving 8-pin MSOP Package
• Pinout – same as TC1411/TC1412/TC1413
General Description
The TC1410/TC1410N are 0.5A CMOS buffers/drivers.
They do not latch up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current
of either polarity being forced back into their output. All
terminals are fully protected against Electrostatic
Discharge (ESD) up to 2.0 kV (HBM) and 400V (MM).
As MOSFET drivers, the TC1410/TC1410N can easily
charge a 500 pF gate capacitance in 25 ns with
matched rise and fall times. To ensure the MOSFET’s
intended state will not be affected even by large
transients, low enough impedance in both the ‘ON’ and
‘OFF’ states are provided. The leading and trailing
edge propagation delay times are also matched to
allow driving short-duration inputs with greater
accuracy.
Package Type
8-Pin MSOP/PDIP/SOIC
V
DD
1
IN 2
NC 3
GND 4
2
8
7
6
5
6,7
OUT
OUT
GND
Applications
•
•
•
•
Switch Mode Power Supplies
Line Drivers
Pulse Transformer Drive
Relay Driver
NC 3
GND 4
2
TC1410N
TC1410
V
DD
V
DD
1
IN 2
8 V
DD
7 OUT
6 OUT
5 GND
6,7
Inverting
Non-Inverting
NC = No Connection
Note:
For proper operation, duplicate pins
must be connected together.
2001-2013 Microchip Technology Inc.
DS20001389E-page 1
TC1410/TC1410N
Functional Block Diagram
V
DD
TC1410
Inverting
Output
300 mV
Output
Input
Effective
Input C = 10 pF
4.7V
Non-Inverting
Output
TC1410N
GND
DS20001389E-page 2
2001-2013 Microchip Technology Inc.
TC1410/TC1410N
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage ...................... V
DD
+ 0.3V to GND – 5.0V
Power Dissipation (T
A
≤
70°C)
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, over the operating temperature range with 4.5V
≤
V
DD
≤
16V.
Typical values are measured at T
A
= +25°C, V
DD
= 16V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
V
OH
V
OL
R
O
V
DD
– 0.025
—
—
—
—
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note
1)
Rise Time
t
R
—
—
—
Fall Time
t
F
—
—
—
Delay Time
t
D1
—
—
—
Delay Time
t
D2
—
—
—
Note 1:
Switching times ensured by design.
25
27
29
25
27
29
30
33
35
30
33
35
35
40
40
35
40
40
40
45
45
40
45
45
ns
ns
ns
ns
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
I
PK
I
REV
—
—
—
—
16
20
20
0.5
0.5
—
0.025
22
28
28
—
—
A
A
V
V
Ω
DC Test
DC Test
V
DD
= 16V, I
O
= 10 mA,
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C
V
DD
= 16V
Duty cycle
≤
2%, t
≤
300 µs,
V
DD
= 16V
V
IH
V
IL
I
IN
2.0
—
-1
-10
—
—
—
—
—
0.8
1
10
V
V
µA
0V
≤
V
IN
≤
V
DD,
T
A
= +25°C
-40°C
≤
T
A
≤
+85°C
Sym
Min
Typ
Max
Units
Conditions
2001-2013 Microchip Technology Inc.
DS20001389E-page 3
TC1410/TC1410N
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, over the operating temperature range with 4.5V
≤
V
DD
≤
16V.
Typical values are measured at T
A
= +25°C, V
DD
= 16V.
Parameters
Power Supply
Power Supply Current
Note 1:
I
S
—
—
Switching times ensured by design.
0.5
0.1
1.0
0.15
mA
V
IN
= 3V, V
DD
= 16V
V
IN
= 0V
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
16V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
—
—
—
211
89.3
149.5
—
—
—
ºC/W
ºC/W
ºC/W
T
A
T
A
T
J
T
A
0
-40
—
-65
—
—
—
—
+70
+85
+150
+150
ºC
ºC
ºC
ºC
Sym
Min
Typ
Max
Units
Conditions
DS20001389E-page 4
2001-2013 Microchip Technology Inc.
TC1410/TC1410N
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, over operating temperature range with 4.5V
≤
V
DD
≤
16V.
500
T
A
= +25°C
500
V
SUPPLY
= 16V
V
IN
= 3V
400
I
SUPPLY
(μA)
400
I
SUPPLY
(μA)
V
IN
= 3V
300
300
200
200
100
V
IN
= 0V
100
V
IN
= 0V
0
4
6
8
10
12
14
16
0
-40
-20
0
20
40
60
80
V
DD
(V)
TEMPERATURE (°C)
FIGURE 2-1:
Quiescent Supply Current
vs. Supply Voltage.
1.6
FIGURE 2-4:
vs. Temperature.
1.6
Quiescent Supply Current
T
A
= +25°C
V
SUPPLY
= 16V
1.5
V
THRESHOLD
(V)
V
THRESHOLD
(V)
1.5
V
IH
1.4
V
IH
1.4
1.3
1.3
1.2
V
IL
1.2
V
IL
1.1
4
6
8
10
12
14
16
1.1
-40
-20
0
20
40
60
80
V
DD
(V)
TEMPERATURE (°C)
FIGURE 2-2:
Voltage.
50
40
Input Threshold vs. Supply
FIGURE 2-5:
Temperature.
50
Input Threshold vs.
T
A
= +85°C
T
A
= +25°C
R
DS-ON
(Ohms)
40
30
R
DS-ON
(Ohms)
30
20
20
T
A
= -40°C
10
0
4
6
8
10
12
14
16
T
A
= +85°C
10
T
A
= +25°C
T
A
= -40°C
0
4
6
8
10
12
14
16
V
DD
(V)
V
DD
(V)
FIGURE 2-3:
High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-6:
Low-State Output
Resistance vs. Supply Voltage.
2001-2013 Microchip Technology Inc.
DS20001389E-page 5
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