MCP6561/1R/2/4
1.8V Low Power Push-Pull Output Comparator
Features
• Propagation Delay at 1.8V
DD
:
- 56 ns (typical) High to Low
- 49 ns (typical) Low to High
• Low Quiescent Current: 100 µA (typical)
• Input Offset Voltage: ±3 mV (typical)
• Rail-to-Rail Input: V
SS
- 0.3V to V
DD
+ 0.3V
• CMOS/TTL Compatible Output
• Wide Supply Voltage Range: 1.8V to 5.5V
• Available in Single, Dual, and Quad
• Packages: SC70-5, SOT-23-5, SOIC, MSOP,
TSSOP
Description
The Microchip Technology, Inc. MCP6561/1R/2/4
families of CMOS/TTL compatible comparators are
offered in single, dual, and quad configurations.
These comparators are optimized for low power 1.8V,
single-supply applications with greater than rail-to-rail
input operation. The internal input hysteresis eliminates
output switching due to internal input noise voltage,
reducing current draw. The push-pull output of the
MCP6561/1R/2/4 family supports rail-to-rail output
swing, and interfaces with CMOS/TTL logic. The output
toggle frequency can reach a typical of 4 MHz (typical)
while limiting supply current surges and dynamic power
consumption during switching.
This family operates with single supply voltage of 1.8V
to 5.5V while drawing less than 100 µA/comparator of
quiescent current (typical).
Typical Applications
•
•
•
•
•
•
•
Laptop computers
Mobile Phones
Hand-held Electronics
RC Timers
Alarm and Monitoring Circuits
Window Comparators
Multi-vibrators
Package Types
MCP6561
SOT-23-5, SC70-5
OUT
1
V
SS
2
+IN
3
MCP6562
SOIC, MSOP
-INA
2
+INA
3
V
SS
4
- +
+ -
5
V
DD
OUTA
1
+
-
8
V
DD
7
OUTB
6
-INB
5
+INB
Design Aids
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
4
-IN
MCP6561R
SOT-23-5
OUT
1
V
DD
2
+IN
3
5
V
SS
+
-
MCP6564
SOIC, TSSOP
OUTA
1
-INA
2
+INA
3
V
DD
4
+INB
5
-INB
6
OUTB
7
- +
+ -
- +
+ -
Related Devices
• Open-Drain Output: MCP6566/6R/7/9
14
OUTD
13
-IND
12
+IND
11
V
SS
10 +INC
9
-INC
8
OUTC
4
-IN
Typical Application
V
IN
V
DD
R
2
R
F
V
DD
V
OUT
MCP656X
R
3
©
2009 Microchip Technology Inc.
DS22139A-page 1
MCP6561/1R/2/4
NOTES:
DS22139A-page 2
©
2009 Microchip Technology Inc.
MCP6561/1R/2/4
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Maximum Ratings*
V
DD
- V
SS
....................................................................... 6.5V
All other inputs and outputs............V
SS
- 0.3V to V
DD
+ 0.3V
Difference Input voltage ......................................|V
DD
- V
SS
|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)..................≥ 4 kV/300V
*Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN
- = V
SS
,
R
L
= 10 kΩ to V
DD
/2 (see
Figure 1-1).
Parameters
Power Supply
Supply Voltage
Quiescent Current per comparator
Power Supply Rejection Ratio
Input
Input Offset Voltage
Input Offset Drift
Input Offset Current
Input Bias Current
V
OS
ΔV
OS
/ΔT
I
OS
I
B
-10
—
—
—
—
—
Input Hysteresis Voltage
Input Hysteresis Linear Temp. Co.
Input Hysteresis Quadratic Temp.
Co.
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
V
HYST
TC
1
TC
2
V
CMR
CMRR
1.0
—
—
V
SS
−0.2
V
SS
−0.3
54
50
54
Common Mode Input Impedance
Differential Input Impedance
Push-Pull Output
High Level Output Voltage
Low Level Output Voltage
Short Circuit Current
Output Pin Capacitance
Note 1:
2:
3:
V
OH
V
OL
I
SC
C
OUT
V
DD
−0.7
—
—
—
—
—
±30
8
—
0.6
—
—
V
V
mA
pF
I
OUT
= -3 mA/-8 mA with V
DD
= 1.8V/5.5V
(Note 3)
I
OUT
= 3 mA/8 mA with V
DD
= 1.8V/5.5V
(Note 3)
Note 3
Z
CM
Z
DIFF
—
—
V
DD
I
Q
PSRR
1.8
60
63
—
100
70
5.5
130
—
+10
—
—
—
—
5000
5.0
—
—
V
DD
+0.2
V
DD
+0.3
—
—
—
—
—
V
µA
dB
mV
µV/°C
pA
pA
pA
pA
mV
µV/°C
µV/°C
2
V
V
dB
dB
dB
Ω||pF
Ω||pF
V
DD
= 1.8V
V
DD
= 5.5V
V
CM
= -0.3V to V
DD
+0.3V, V
DD
= 5.5V
V
CM
= V
DD
/2 to V
DD
+0.3V, V
DD
= 5.5V
V
CM
= -0.3V to V
DD
/2, V
DD
= 5.5V
I
OUT
= 0
V
CM
= V
SS
V
CM
= V
SS
(Note 1)
V
CM
= V
SS
V
CM
= V
SS
T
A
= +25°C, V
IN
- = V
DD
/2
T
A
= +85°C, V
IN
- = V
DD
/2
T
A
= +125°C, V
IN
- = V
DD
/2
V
CM
= V
SS
(Notes 1, 2)
Symbol
Min
Typ
Max
Units
Conditions
±
3
±
2
±
1
1
60
1500
—
10
0.3
—
—
66
63
65
10 ||4
10
13
||2
13
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
V
HYST
at different temperatures is estimated using V
HYST
(T
A
) = V
HYST @ +25°C
+ (T
A
- 25°C) TC
1
+ (T
A
- 25°C)
2
TC
2
.
Limit the output current to Absolute Maximum Rating of 50 mA.
©
2009 Microchip Technology Inc.
DS22139A-page 3
MCP6561/1R/2/4
AC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= 25°C, V
IN
+ = V
DD
/2, V
IN
- = V
SS
,
R
L
= 10 kΩ to V
DD
/2, and C
L
= 25 pF. (see
Figure 1-1).
Parameters
Propagation Delay
High-to-Low,100 mV Overdrive
Low-to-High, 100 mV Overdrive
Skew
1
Symbol
t
PHL
t
PLH
t
PDS
t
R
t
F
f
TG
E
NI
Min
—
—
—
—
—
—
—
—
—
—
Typ
56
34
49
47
±10
20
20
4
2
350
Max
80
80
80
80
—
—
—
—
—
—
Units
ns
ns
ns
ns
ns
ns
ns
MHz
MHz
µV
P
-
P
Conditions
V
CM
= V
DD
/2, V
DD
= 1.8V
V
CM
= V
DD
/2, V
DD
= 5.5V
V
CM
= V
DD
/2, V
DD
= 1.8V
V
CM
= V
DD
/2, V
DD
= 5.5V
Output
Rise Time
Fall Time
Maximum Toggle Frequency
Input Voltage Noise
Note 1:
2:
2
V
DD
= 5.5V
V
DD
= 1.8V
10 Hz to 10 MHz
Propagation Delay Skew is defined as: t
PDS
= t
PLH
- t
PHL
.
ENI is based on SPICE simulation.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated: V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, SC70-5
Thermal Resistance, SOT-23-5
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
331
256
163
206
120
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
Symbol
Min
Typ
Max
Units
Conditions
1.2
Test Circuit Configuration
This test circuit configuration is used to determine the
AC and DC specifications.
V
DD
MCP656X
200 kΩ
I
OUT
200 kΩ
200 kΩ
V
IN
= V
SS
V
SS
= 0V
200 kΩ
V
OUT
25 pF
FIGURE 1-1:
AC and DC Test Circuit for
the Push-Pull Output Comparators.
DS22139A-page 4
©
2009 Microchip Technology Inc.
MCP6561/1R/2/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN–
= GND,
R
L
= 10 kΩ to V
DD
/2, and C
L
= 25 pF.
30%
Occurrences (%)
V
DD
= 1.8V
V
CM
= V
SS
Avg. = -0.1 mV
StDev = 2.1 mV
3588 units
V
DD
= 5.5V
V
CM
= V
SS
Avg. = -0.9 mV
StDev = 2.1 mV
3588 units
50%
Occurrences (%)
40%
30%
20%
10%
0%
25%
20%
15%
10%
5%
0%
V
DD
= 1.8V
Avg. = 3.4 mV
StDev = 0.2 mV
3588 units
V
DD
= 5.5V
Avg. = 3.6 mV
StDev = 0.1 mV
3588 units
-10 -8
-6
-4
-2 0
2
V
OS
(mV)
4
6
8
10
1.0
1.5
2.0
2.5 3.0 3.5
V
HYST
(mV)
4.0
4.5
5.0
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Hysteresis Voltage.
60%
Occurrences (%)
50%
40%
30%
20%
10%
0%
Occurrences (%)
V
CM
= V
SS
Avg. = 0.9 µV/°C
StDev = 6.6 µV/°C
1380 Units
T
A
= -40°C to +125°C
60%
50%
40%
30%
20%
10%
0%
0
1380 Units
T
A
= -40°C to 125°C
V
CM
= V
SS
V
DD
= 5.5V
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
V
DD
= 1.8V
Avg. = 12 µV/°C
StDev = 0.6 µV/°C
-60 -48 -36 -24 -12 0 12 24
V
OS
Drift (µV/°C)
36
48
60
2
4
8 10 12 14 16
V
HYST
Drift, TC1 (µV/°C)
6
18
20
FIGURE 2-2:
Input Offset Voltage Drift.
FIGURE 2-5:
Input Hysteresis Voltage
Drift - Linear Temp. Co. (TC1).
7.0
6.0
5.0
V
OUT
(V)
4.0
3.0
2.0
1.0
0.0
-1.0
V
DD
= 5.5V
V
IN
+ = V
DD
/2
30%
Occurrences (%)
V
DD
= 5.5V
V
DD
= 1.8V
2
V
IN
-
V
OUT
20%
Avg. = 0.25 µV/°C
StDev = 0.1 µV/°C
2
Avg. = 0.3 µV/°C
StDev = 0.2 µV/°C
2
2
10%
1380 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
0%
-0.50
Time (3 µs/div)
-0.25
0.00
0.25
0.50
0.75
V
HYST
Drift, TC2 (µV/°C
2
)
1.00
FIGURE 2-3:
Phase Reversal.
Input vs. Output Signal, No
FIGURE 2-6:
Input Hysteresis Voltage
Drift - Quadratic Temp. Co. (TC2).
©
2009 Microchip Technology Inc.
DS22139A-page 5
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