KBPC15005T/W thru KBPC1504T/W
Silicon Bridge
Rectifier
Features
• High efficiency
• Types up to 1000 V V
RRM
• Silicon junction
• Metal case
KBPC-T/W Package
V
RRM
= 50 V - 1000 V
I
F
=15 A
Mechanical Data
Case: Mounted in the bridge encapsulation
Mounting position: Hole for #10 screw
Polarity: Marked on case
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
55 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
KBPC15005T/W KBPC1501T/W KBPC1502T/W KBPC1504T/W Unit
50
35
50
15
300
-55 to 150
-55 to 150
100
70
100
15
300
-55 to 150
-55 to 150
200
140
200
15
300
-55 to 150
-55 to 150
400
280
400
15
300
-55 to 150
-55 to 150
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 7.5 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 100 °C
KBPC15005T/W KBPC1501T/W KBPC1502T/W KBPC1504T/W Unit
1.1
5
500
2.3
1.1
5
500
2.3
1.1
5
500
2.3
1.1
5
500
2.3
V
μA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
www.genesicsemi.com
1
Embedded System
京公网安备 11010802033920号
EEWORLD
