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AUIRLS3114ZTRR

Description
MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size638KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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AUIRLS3114ZTRR Overview

MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET

AUIRLS3114ZTRR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current122 A
Rds On - Drain-Source Resistance3.8 mOhms
Qg - Gate Charge40 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation143 W
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.3 mm
Length6.5 mm
Width6.22 mm
NumOfPackaging3
Factory Pack Quantity800
Unit Weight0.139332 oz
 
AUTOMOTIVE GRADE
AUIRLS3114Z
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Enhanced dv/dt and di/dt capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
40V
3.8m
4.9m
122A
56A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base part number
AUIRLS3114Z
Package Type
D
2
-Pak
S
G
D
2
Pak
AUIRLS3114Z
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3114Z
AUIRLS3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS (Tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wirebond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
122
86
56
488
143
0.95
± 16
168
518
See Fig.15,16, 12a, 12b
2.3
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.05
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-6

AUIRLS3114ZTRR Related Products

AUIRLS3114ZTRR AUIRLS3114ZTRL
Description MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET MOSFET 40V 42A 4.9 mOhm Auto Lgc Lvl MOSFET
Manufacturer Infineon Infineon
Product Category MOSFET MOSFET
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case TO-252-3 TO-252-3
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Id - Continuous Drain Current 122 A 122 A
Rds On - Drain-Source Resistance 3.8 mOhms 3.8 mOhms
Qg - Gate Charge 40 nC 40 nC
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 143 W 143 W
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Width 6.22 mm 6.22 mm
Factory Pack Quantity 800 800
Unit Weight 0.139332 oz 0.139332 oz
Packaging Reel Reel
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