IS61C6416AL
IS62C6416AL
IS64C6416AL
IS65C6416AL
ISSI
JUNE 2005
®
64K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
IS61C6416AL and IS64C6416AL
• High-speed access time: 12 ns, 15ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical)
CMOS standby
IS62C6416AL and IS65C6416AL
• High-speed access time: 35 ns, 45ns
• Low Active Power: 50 mW (typical)
• Low Standby Power: 100 µW (typical)
CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
• Commercial, Industrial and Automotive tempera-
ture ranges available
• Lead-free available
DESCRIPTION
The
ISSI
IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are high-speed, 1,048,576-bit static RAMs
organized as 65,536 words by 16 bits. They are fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
1
IS61C6416AL
IS62C6416AL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
IS64C6416AL
IS65C6416AL
ISSI
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
®
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
Write
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (IS61C/62C6416AL)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
V
DD
5V ± 10%
5V ± 10%
OPERATING RANGE (IS64C/65C6416AL)
Range
Automotive
Ambient Temperature
-40°C to +125°C
V
DD
5V ± 10%
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
3
IS61C6416AL
IS62C6416AL
IS64C6416AL
IS65C6416AL
ISSI
-12 ns
Min. Max.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
—
—
—
—
—
—
—
40
45
—
50
55
—
35
1
1
—
—
—
—
350
400
—
200
450
1
µA
mA
60
50
mA
-15 ns
Min. Max.
Unit
mA
®
IS61C6416AL/IS64C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
1
V
DD
Operating
Supply Current
V
DD
Dynamic Operating
Supply Current
Test Conditions
V
DD
= V
DD MAX
.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
V
DD
= V
DD MAX
.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
I
CC
2
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= V
DD MAX
.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
DD
= V
DD MAX
.,
CE
≤
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25% and not 100% tested.
IS62C6416AL/IS65C6416AL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
Average operating
Current
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
CE
= V
IL
,
V
IN
= V
IH
or V
IL
,
I
I/O
= 0 mA
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
IN
= V
IH
or V
IL
V
DD
= Max.,
V
IN
= V
IH
or V
IL
,
CE
≥
V
IH
,
f=0
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V,
or V
IN
≤
V
SS
+ 0.2V, f = 0
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
-35 ns
Min. Max.
—
—
—
—
—
—
—
—
10
15
—
35
40
—
1
1.5
—
5
10
—
15
2
µA
45
mA
20
mA
-45 ns
Min. Max.
Unit
mA
I
CC
1
I
SB
1
I
SB
2
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/08/05
5
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