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DL-8032-001

Description
INFRARED LASER DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size30KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DL-8032-001 Overview

INFRARED LASER DIODE

DL-8032-001 Parametric

Parameter NameAttribute value
MakerSANYO
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current0.2 A
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature50 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power150 mW
peak wavelength830 nm
shapeROUND
size2 mm
surface mountNO
Maximum threshold current70 mA

DL-8032-001 Preview

INFRARED LASER DIODE
DL-8032-001
Features
• Lasing wavelength : 830 nm (Typ.)
• High output power : 150 mW at 50°C
• Low threshold current : Ith = 50 mA (Typ.)
Package
Ver.4 Apr. 1999
Tolerance : ± 0.2
(Unit : mm)
0
ø9.0 - 0.03
ø5.35
ø4.75± 0.15
ø3.0
Effective window diameter 2.0min.
1
3
2
Top view
Applications
1.0± 0.1
• Bar-code scanner
• Laser beam printer
LD facet
Absolute Maximum Ratings
(Tc=25°C)
Parameter
Light Output
Reverse
Voltage
CW
Laser
PD
V
R
Topr
Tstg
Symbol
Po
Ratings
150
2
30
-10 to +50
-40 to +85
V
°C
°C
2
ø1.4max.
3-
ø0.45± 0.1
Pin No.
1 2 3
ø2.54
Unit
mW
Pin Connection
1
3
Operating Temperature
Storage Temperature
LD
PD
Electrical and Optical Characteristics
(Tc=25°C)
Parameter
Threshold Current
Operating Current
Operating Voltage
Lasing Wavelength
Perpendicular
Beam
1)
Divergence
Parallel
Off Axis
Angle
Perpendicular
Parallel
Symbol
Ith
Iop
Vop
Lp
Qv
Qh
dAv
dQh
dPo/dIop
Im
Ac
Condition
CW
Po=150mW
Po=150mW
Po=150mW
Po=150mW
Po=150mW
-
-
-
Po=150mW
Po=150mW
Min.
-
-
-
815
12
5
-
-
0.7
0.15
-
Typ.
50
185
1.8
830
18
7
-
-
1.0
0.5
10
Max.
70
220
2.2
840
25
11
±3
±3
-
2.0
-
Unit
mA
mA
V
nm
°
°
°
°
mW/mA
mA
µm
Differential Efficiency
Monitoring Output Current
Astigmatism
1) Full angle at half maximum
Note : The above product specification are subject to change without notice.
Tottori SANYO Electric Co., Ltd.
LED Division
5-318, Tachikawa, Tottori 680-8634 Japan
EIectronic Device Business Headquarters
TEL : +81-857-21-2137 FAX : +81-857-21-2161
DL-8032-001
Characteristics
Output power vs. Forward current
200
150
15 25 50°C
Threshold current vs. Temperature
100
80
60
40
100
50
20
0
0
50
100
150
200
Forward current IF (mA)
250
10
0
10
20
30
40
50
Temperatube Tc (°C)
60
Monitor current vs. Output power
0.3
Tc=25°C
Vr(PD)=5V
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0
100
50
Output power Po (mW)
150
Beam divergence
Po=150mW
Tc=25°C
Qv
0.1
Qh
-40 -30 -20 -10 0 10 20
Angle ( ° )
30
40
Lasing wavelength vs. Temperature
840
Po=150mW
835
Output power vs. Lasing wavelength
Tc=25°C
150mW
100mW
830
50mW
825
820
0
10
20
30
40
Temperature Tc (°C)
50
60
827
828
829
830
Lasing wavelength Lp (nm)
831
30mW
10mW
This is typical data and it may not represent all products.

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