STB20PF75
P-CHANNEL 75V - 0.10
Ω
- 20A D²PAK
STripFET™ II POWER MOSFET
TYPE
STB20PF75
■
■
■
■
V
DSS
75 V
R
DS(on)
< 0.12
Ω
I
D
20 A
TYPICAL R
DS
(on) = 0.10
Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
■
MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
D
2
PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
•)
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
75
75
± 20
20
14
80
80
0.53
10
350
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(
•)
Pulse width limited by safe operating area
(1) I
SD
≤
20A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 10 A, V
DD
= 30V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
March 2004
1/9
STB20PF75
THERMAL DATA
Rthj-case
Rthj-PCB
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-PCB
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
Typ
1.88
34
300
°C/W
°C/W
°C
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS
(T
case
= 25 °C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
V
GS
= ± 20 V
Min.
75
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
I
GSS
ON
(*)
Symbol
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V
DS
= V
GS
V
GS
= 10 V
I
D
= 250 µA
I
D
= 10 A
Min.
2
Typ.
3
0.10
Max.
4
0.12
Unit
V
Ω
DYNAMIC
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
= 15 V
I
D
= 10 A
Min.
Typ.
15
1150
170
70
Max.
Unit
S
pF
pF
pF
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2/9
STB20PF75
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
(*)
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 37.5 V
I
D
= 10 A
V
GS
= 10 V
R
G
= 4.7
Ω
(Resistive Load, Figure 1)
V
DD
=60V I
D
=20A V
GS
=10V
(See test circuit, Figure 2)
Min.
Typ.
20
51
38
7
10
52
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
(*)
Symbol
t
d(off)
t
f
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
V
DD
= 60 V
I
D
= 10 A
V
GS
= 10 V
R
G
= 4.7
Ω
(Resistive Load, Figure 1)
Min.
Typ.
40
13
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
(*)
Symbol
I
SD
I
SDM (
•
)
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A
V
GS
= 0
80
250
6.2
Test Conditions
Min.
Typ.
Max.
20
80
1.3
Unit
A
A
V
ns
nC
A
I
SD
= 20 A
di/dt = 100A/µs
T
j
= 150°C
V
DD
= 25 V
(see test circuit, Figure 3)
(*)
Pulse width
[
300 µs, duty cycle 1.5 %.
(
•)
Pulse width limited by T
JMAX
Safe Operating Area
Thermal Impedance
3/9
STB20PF75
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STB20PF75
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
5/9
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