should be connected to the node requiring transient
voltage protection
= The Anode of the TVS Diodes
6−lead SOT−563
V
N
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Package Power Dissipation SOT−563
Rating
−65
to +150
0.15
Units
°C
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
−40
to +85
Units
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
C
IN
DC
IN
V
RSO
I
LEAK
V
SIG
Parameter
Channel Input Capacitance
Differential Channel I/O to GND Capacitance
Reverse Stand−off Voltage
Conditions
T
A
= 25°C, 2.5 VDC, 1 MHz
T
A
= 25°C, 2.5 VDC, 1 MHz
I
R
= 10
mA,
T
A
= 25°C
I
R
= 1 mA, T
A
= 25°C
Leakage Current
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
Human Body Model, MIL−STD−883, Method 3015
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
V
IN
= 5.0 VDC, T
A
= 25°C
I = 10 mA, T
A
= 25°C
I =
−10
mA, T
A
= 25°C
T
A
= 25°C; Notes 2 & 3
T
A
= 25°C; Notes 1 & 3
T
A
= 25°C; Note 1
0.5
1.3
0.7
1.9
0.9
2.4
W
5.5
−0.4
±8
±15
6.8
−0.8
5.5
6.1
Min
Typ
4
0.14
6.8
6.8
8.5
8.8
1
9.0
−1.2
Max
Units
pF
pF
V
V
mA
V
V
ESD
kV
R
D
1 Human Body Model per MIL−STD−883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
N
grounded.
2 Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330
W,
V
N
grounded.
3 These measurements performed with no external capacitor on CH
X
.
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2
CM1219
PERFORMANCE INFORMATION
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in
Figure 1.
Figure 1.
Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms.
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3
CM1219
MECHANICAL SPECIFICATIONS
The CM1219−05SE is supplied in a 5−pin SOT−563 package. Dimensions are presented below.
Table 4. CSP TAPE AND REEL SPECIFICATIONS
Pocket Size (mm)
Part Number
CM1219
Chip Size (mm)
1.60 X 1.60 X 0.55
B
0
X A
0
X K
0
1.78 X 1.78 X 0.69
Tape Width
W
8 mm
Reel Diameter
178 mm (7″)
Qty per
Reel
5000
P
0
4 mm
P
1
4 mm
Top
Cover
Tape
P
o
10 Pitches Cumulative
Tolerance On Tape
±0.2
mm
A
o
+
K
o
For Tape Feeder Reference
Only Including Draft,
Concerning around B.
Embossment
B
o
+
+
W
P
1
User Direction of Feed
Center Lines
of Cavity
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4
CM1219
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
D
−X−
6
5
4
A
L
1
2
3
E
−Y−
b
H
E
e
5
6 PL
M
C
X Y
0.08 (0.003)
DIM
A
b
C
D
E
e
L
H
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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For additional information, please contact your local
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