DSP45-16A
Standard Rectifier
V
RRM
I
FAV
V
F
= 2x 1600 V
=
=
45 A
1.23 V
Phase leg
Part number
DSP45-16A
Backside: anode/cathode
1
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130215d
© 2013 IXYS all rights reserved
DSP45-16A
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
T
VJ
= 175 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max.
1700
1600
40
1.5
1.26
1.57
1.23
1.66
45
0.81
9.1
0.55
Unit
V
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
K/W
W
A
A
A
A
V
R
= 1600 V
V
R
= 1600 V
I
F
=
I
F
=
I
F
=
I
F
=
45 A
90 A
45 A
90 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
T
C
= 130°C
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
18
270
480
520
410
440
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
1.15 kA²s
1.13 kA²s
840
805
A²s
A²s
pF
C
J
junction capacitance
V
R
= 400 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130215d
© 2013 IXYS all rights reserved
DSP45-16A
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
6
0.8
20
1.2
120
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Part Number
DSP45-16A
Marking on Product
DSP45-16A
Delivery Mode
Tube
Quantity
30
Code No.
480665
Similar Part
DSP45-16AZ
DSP45-16AR
DSP45-12A
DSP45-12AZ
DSP45-18A
Package
TO-268AA (D3Pak) (2HV)
ISOPLUS247 (3)
TO-247AD (3)
TO-268AA (D3Pak) (2HV)
TO-247AD (3)
Voltage class
1600
1600
1200
1200
1800
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.81
6.5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130215d
© 2013 IXYS all rights reserved
DSP45-16A
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
b4
2x
e
3x
b
C
A1
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130215d
© 2013 IXYS all rights reserved
DSP45-16A
Rectifier
80
70
400
50 Hz, 80% V
RRM
360
1200
1000
800
V
R
= 0 V
60
50
40
I
F
[A]
320
T
VJ
= 45°C
It
600
2
T
VJ
= 45°C
I
FSM
280
30
20
10
0
0.5
[A
2
s]
400
[A]
T
VJ
= 150°C
125°C
25°C
1.0
1.5
T
VJ
= 150°C
240
T
VJ
= 150°C
200
0.001
200
0
0.01
0.1
1
1
2
2
3
4 5 6 7 8 910
V
F
[V ]
Fig. 1 Forward current versus
voltage drop per diode
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I t versus time per diode
80
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
80
60
P
tot
40
DC =
1
0.5
0.4
0.33
0.17
0.08
60
I
dAVM
40
[A]
[W]
20
20
DC =
1
0.5
0.4
0.33
0.17
0.08
0
0
10
20
30
40
50
0
50
100
150
200
0
0
50
100
150
200
I
dAVM
[A]
T
amb
[°C]
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current & ambient temperature
0.6
0.5
0.4
Z
th
0.3
[K/W]
0.2
0.1
0.0
1
10
100
1000
10000
i
1
2
3
4
t [ms]
Fig. 6 Transient thermal impedance junction to case
R
i
0.033
0.095
0.164
0.258
t
i
0.0006
0.0039
0.033
0.272
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130215d
© 2013 IXYS all rights reserved
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