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TPSMD45CA

Description
ESD Suppressors / TVS Diodes 45V 3000W BI-DIR TPSMD AEC-Q101
CategoryCircuit protection   
File Size974KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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TPSMD45CA Overview

ESD Suppressors / TVS Diodes 45V 3000W BI-DIR TPSMD AEC-Q101

TPSMD45CA Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerLittelfuse
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
PolarityBidirectional
Termination StyleSMD/SMT
Breakdown Voltage55.3 V
Working Voltage45 V
Clamping Voltage72.7 V
Ipp - Peak Pulse Current41.3 A
Package / CaseDO-214AB-2
Pd - Power Dissipation6.5 W
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
QualificationAEC-Q101
PackagingReel
NumOfPackaging1
Factory Pack Quantity3000
Unit Weight0.007408 oz
TVS Diodes
Surface Mount – 3000W > TPSMD series
TPSMD Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The TPSMD series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• Hi reliability application
and automotive grade
AEC-Q101 qualified
• For surface mounted
applications in order to
optimize board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C x (1+αT
x (T
J
- 25))
(αT:Temperature Coefficient)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
A
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
6.5
300
3.5
-65 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
• Glass passivated chip
junction
• 3000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 2µA
above 12V
• High temperature
soldering guaranteed:
260°C/10 seconds at
terminals
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is Pb-
free and the terminal finish
material is tin(Sn) (IPC/
JEDEC J-STD-609A.01)
Functional Diagram
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Bi-directional
Cathode
Uni-directional
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/10/16
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