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IGW30N100TFKSA1

Description
IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
CategoryDiscrete semiconductor    The transistor   
File Size792KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IGW30N100TFKSA1 Overview

IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech

IGW30N100TFKSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247AD
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)60 A
Collector-emitter maximum voltage1000 V
ConfigurationSINGLE
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)569 ns
Nominal on time (ton)54 ns
Base Number Matches1
IGW30N100T
TrenchStop
®
series
Low Loss IGBT: IGBT in TrenchStop
®
and Fieldstop technology
• TrenchStop
®
and Fieldstop technology for 1000 V applications
offers:
- low V
CEsat
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- positive temperature coefficient in V
CEsat
• Designed for:
- frequency Converters
- uninterrupted Power Supply
• Low EMI
• Low gate charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
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Maximum ratings
Parameter
011 '20! 3#22 ! 012 %
4
'011 '20! '5!! $2 1#3#2 6 7
Symbol
Value
+
8
Unit
,
,
,
+
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2
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8
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05$2#$% 20!J5
9'! D
K#353 0= 305$2#$% !0' 99 9L
Thermal Resistance
Parameter
Characteristic
(M 2N !3 1 ! 9#92 $'
F5$'2#0$ ' 9
N !3 1 ! 9#92 $'
F5$'2#0$ 37# $2
Symbol Conditions
OP QR
OP R
Max. Value
8
/
Unit
ST)
ST)
1
Rev 2.4 2009-12-02

IGW30N100TFKSA1 Related Products

IGW30N100TFKSA1 IGW30N100T
Description IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code TO-247AD TO-247AD
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Maximum collector current (IC) 60 A 60 A
Collector-emitter maximum voltage 1000 V 1000 V
Configuration SINGLE SINGLE
JEDEC-95 code TO-247AD TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 569 ns 569 ns
Nominal on time (ton) 54 ns 54 ns
Base Number Matches 1 1
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