ZXM62P03E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
0.15Ω @ V
GS
= -10V
-30V
0.23Ω @ V
GS
= -4.5V
-1.5A
I
D
T
A
= +25°C
-2.6A
Features and Benefits
Fast Switching Speed
Low On-Resistance
Low Threshold
Low Gate Drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Mechanical Data
Case: SOT-26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.015 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SOT-26
D
G
S
Top View
Equivalent Circuit
Pin Out - Top
View
Ordering Information
(Note 4)
Product
ZXM62P03E6TA
ZXM62P03E6TC
Notes:
Marking
2P03
2P03
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000 Units
10,000 Units
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-26
2P03 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
̅
M or M = Month (ex: 9 = September)
2P03
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
Feb
2
2016
D
Mar
3
YM
2017
E
Apr
4
May
5
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
March 2015
© Diodes Incorporated
ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
1 of 7
www.diodes.com
ZXM62P03E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= -4.5V
T
A
= +25°C (Note 5)
T
A
= +70°C (Note 5)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-30
±20
-1.5
-1.2
-7.4
-0.54
-7.4
Units
V
V
A
A
A
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
P
D
R
θJA
R
θJA
T
J,
T
STG
Value
625
5
806
6.4
113
73
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 seconds.
7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Min
-30
-1
1.1
Typ
19.9
13
330
120
45
2.8
6.4
13.9
10.3
Max
-1
±100
0.15
0.23
-0.95
10.2
1.5
3
Unit
V
μA
nA
V
Ω
S
V
ns
nC
Test Condition
I
D
= -250μA, V
GS
= 0V
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250μA, V
DS
= V
GS
V
GS
= -10V, I
D
= -1.6A
V
GS
= -4.5V, I
D
= -0.8A
V
DS
= -10V, I
D
= -0.8A
T
J
= +25°C, I
S
= -1.6A, V
GS
= 0V
T
J
= +25°C, I
F
= -1.6A,
di/dt = 100A/μs
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Notes:
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
ns
V
DD
= -15V, I
D
= -1.6A,
R
G
6.2Ω R
D
25Ω
nC
V
DS
= -24V, V
GS
= -10V,
I
D
= -1.6A
8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM62P03E6
Document Number: DS33483 Rev. 3 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
Analog electronics
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