SSM6J53FE
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type
SSM6J53FE
○
High-Speed Switching Applications
○
Power Management Switch Applications
•
•
•
1.5 V drive
Suitable for high-density mounting due to compact package
Unit : mm
1.6±0.05
1.2±0.05
0.2±0.05
0.5
1.6±0.05
1.0±0.05
Low on-resistance : R
on
= 136 mΩ (max) (@V
GS
= -2.5 V)
: R
on
= 204 mΩ (max) (@V
GS
= -1.8 V)
: R
on
= 364 mΩ (max) (@V
GS
= -1.5 V)
1
2
3
6
5
4
0.12±0.05
Absolute Maximum Ratings
(Ta
=
25°C)
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
-20
±
8
-1.8
-3.6
500
150
−55~150
V
V
A
mW
°C
°C
0.55±0.05
1,2,5,6 :Drain
3 :Gate
4 :Source
Min
−20
−12
⎯
⎯
−0.3
(Note 2)
(Note 2)
(Note 2)
(Note 2)
2.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(Note 2)
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
5.4
95
122
137
568
75
67
29
39
10.6
7.4
3.3
0.8
Characteristics
Symbol
Rating
Unit
ES6
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
JEITA
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2N1A
absolute maximum ratings.
Weight: 7.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm )
Note:
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-Source charge
Gate-Drain charge
Drain-Source forward voltage
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
Q
g
Q
gs
Q
gd
V
DSF
Test Condition
I
D
= −1
mA, V
GS
=
0
I
D
= −1
mA, V
GS
=
+8 V
V
DS
=
−20
V, V
GS
= 0
V
GS
= ±
8 V, V
DS
=
0
V
DS
= −3
V, I
D
= −1
mA
V
DS
= −3
V, I
D
= −0.9
A
I
D
= −1.0
A, V
GS
= −2.5
V
I
D
= −1.0
A, V
GS
= −1.8
V
I
D
= −0.1
A, V
GS
= −1.5
V
V
DS
= −10
V, V
GS
=
0
f
=
1 MHz
V
DD
= −10
V, I
D
= −0.9
A
V
GS
=
0 ~
−2.5
V, R
G
=
4.7
Ω
V
DS
= −16
V, I
DS
=
-1.8 A,
V
GS
= −
4 V
I
D
=
1.8 A, V
GS
=
0
Max
⎯
⎯
−10
±1
−1.0
⎯
136
204
364
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
V
nC
ns
pF
mΩ
Unit
V
μA
μA
V
S
Note 2: Pulse test
0.5
1
2007-11-01
SSM6J53FE
Switching Time Test Circuit
(a) Test Circuit
OUT
IN
−2.5
V
R
G
R
L
V
DD
90%
(b) V
IN
0V
10%
0
−
2.5V
10
μs
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
=
-10 V
R
G
=
4.7
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
V
DD
Marking
6
5
4
Equivalent Circuit (top view)
6
5
4
KG
1
2
3
1
2
3
Precaution
V
th
can be expressed as the voltage between the gate and source when the low operating current value is I
D
= -1mA
for this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a
lower voltage than V
th
. (The relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on).
)
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM6J53FE
-4
-4 V
-3.5
I
D
– V
DS
-10000
-1.5 V
-1000
Common Source
VDS
=
-3 V
I
D
– V
GS
-3
-2.5
-2
-1.5
-1
-0.5
0
-2.5 V
-1.8 V
(mA)
(A)
I
D
-100
Ta
=
85 °C
-10
25 °C
-1
−25
°C
Drain current
VGS = -1.2 V
Drain current
-2
I
D
-0.1
Common Source
Ta
=
25°C
0
-0.5
-1
-1.5
-0.01
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
Drain - Source voltage
V
DS
(V)
Gate - Source voltage
V
GS
(V)
R
DS (ON)
– V
GS
400
ID
=
-0.1 A
400
Common Source
R
DS (ON)
– V
GS
ID
=
-1.0 A
Common Source
300
Drain – Source on-resistance
R
DS (ON)
(mΩ)
300
200
25 °C
100
Ta
=
85 °C
Drain – Source on-resistance
R
DS (ON)
(mΩ)
200
25 °C
Ta
=
85 °C
100
−25
°C
0
0
-2
-4
-6
-8
0
0
-2
-4
-6
−25
°C
-8
Gate - Source voltage
V
GS
(V)
Gate - Source voltage
V
GS
(V)
R
DS (ON)
– I
D
450
Common Source
400
Ta
=
25 °C
500
Common Source
R
DS (ON)
– Ta
Drain – Source on-resistance
R
DS (ON)
(mΩ)
Drain – Source on-resistance
R
DS (ON)
(mΩ)
350
300
250
200
150
100
-2.5 V
50
0
VGS
=
-1.5 V
400
300
ID
=
-0.1 A / VGS
=
-1.5 V
-1.0 A / -1.8 V
-1.8 V
200
100
-1.0 A / -2.5 V
0
−50
0
-1
-2
-3
-4
0
50
100
150
Drain current
I
D
(A)
Ambient temperature
Ta
(°C)
3
2007-11-01
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