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BAS16-G3-18

Description
Diodes - General Purpose, Power, Switching 100 Volt 250mA 6ns 500mA IFSM
CategoryDiscrete semiconductor    diode   
File Size88KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAS16-G3-18 Overview

Diodes - General Purpose, Power, Switching 100 Volt 250mA 6ns 500mA IFSM

BAS16-G3-18 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
BAS16-G
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
3
• Ultra fast switching speed
• Surface mount package ideally suited for
automatic insertion
• High conductance
1
2
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS16-G
ORDERING CODE
BAS16-G3-08 or BAS16-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
AK
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
Peak forward surge current
t
p
= 1 s
t
p
= 1 μs
Half wave rectification with resistive load and
f
50 MHz, on ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
TEST CONDITION
SYMBOL
V
RM
V
RRM
= V
RWM
= V
R
I
FSM
I
FSM
I
F(AV)
I
F
P
tot
VALUE
100
75
1
2
150
300
350
UNIT
V
V
A
A
mA
mA
mW
Average forward current
Forward current
Power dissipation
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Junction and storage temperature range
Operating temperature range
TEST CONDITION
On ceramic substrate
8 mm x 10 mm x 0.7 mm
SYMBOL
R
thJA
T
j
= T
stg
T
op
VALUE
357
-55 to +150
-55 to +150
UNIT
K/W
°C
°C
Rev. 1.1, 22-Nov-13
Document Number: 85416
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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