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BSZ033NE2LS5ATMA1

Description
MOSFET LV POWER MOS
CategoryDiscrete semiconductor    The transistor   
File Size2MB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ033NE2LS5ATMA1 Overview

MOSFET LV POWER MOS

BSZ033NE2LS5ATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-N3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Avalanche Energy Efficiency Rating (Eas)20 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.0041 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)160 A
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,25V
BSZ033NE2LS5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
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