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BFP-520F-E6327

Description
RF Bipolar Transistors NPN 3.5 V 40 mA
Categorysemiconductor    Discrete semiconductor   
File Size526KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BFP-520F-E6327 Overview

RF Bipolar Transistors NPN 3.5 V 40 mA

BFP-520F-E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryRF Bipolar Transistors
RoHSDetails
Transistor TypeBipolar
TechnologySi
Transistor PolarityNPN
DC Collector/Base Gain hfe Min70
Collector- Emitter Voltage VCEO Max2.5 V
Emitter- Base Voltage VEBO1 V
Continuous Collector Current0.04 A
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseTSFP
PackagingCut Tape
PackagingReel
Collector- Base Voltage VCBO10 V
DC Current Gain hFE Max70 at 20 mA at 2 V
Height0.55 mm
Length1.4 mm
Operating Frequency45000 MHz
TypeRF Bipolar Small Signal
Width0.8 mm
Gain Bandwidth Product fT45000 MHz
Maximum DC Collector Current0.04 A
NumOfPackaging2
Pd - Power Dissipation100 mW
Factory Pack Quantity3000
BFP520F
Low Noise Silicon Bipolar RF Transistor
For highest gain and low noise amplifier
Outstanding G
ms
= 22.5 dB at 1.8 GHz
Minimum noise figure
NF
min
= 0.95 dB at 1.8 GHz
For oscillators up to 15 GHz
Transition frequency
f
T
= 45 GHz
Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
Qualification report according to AEC-Q101 available
4
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP520F
Marking
APs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
TSFP-4
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
2.5
2.4
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
98 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
10
10
1
50
5
120
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is measured on the emitter lead at the soldering point to pcb
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
Unit
Junction - soldering point
1)
430
K/W
2013-09-19

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