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80SCLQ030

Description
80 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size47KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

80SCLQ030 Overview

80 A, 30 V, SILICON, RECTIFIER DIODE

80SCLQ030 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionHERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.4 V
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current80 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

80SCLQ030 Preview

PD -94188A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
80SCLQ030
80 Amp, 30V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half-sine
(Per Leg)
V
F
@ 40Apk, T
J
=125°C
(Per Leg)
80SCLQ030 Units
80
30
A
V
Description/Features
The 80SCLQ030 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of hi-
rel environments. It is packaged in the hermetic surface
mount SMD-1 ceramic package. The device's forward
voltage drop and reverse leakage current are optimized for
the lowest power loss and the highest circuit efficiency for
typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control drawings
to TX, TXV and S quality levels.
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
200
0.55
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
2
1
3
ANODE COMMONANODE
CATHODE
IR Case Style SMD-1
www.irf.com
1
7/11/01
80SCLQ030
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V) (Per Leg)
V
RWM
Max. Working Peak Reverse Voltage (V) (Per Leg)
80SCLQ030
30
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current (Per Leg)
200
A
@ t
p
= 8.3 ms half-sine
Limits
80
Units
A
Conditions
50% duty cycle @ T
C
= 81°C, square waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(Per Leg) See Fig. 1Q
Limits
0.58
0.7
0.83
0.47
0.56
0.73
0.42
0.55
0.82
Units
V
V
V
V
V
V
V
V
V
mA
mA
mA
pF
nH
@ 20A
@ 40A
@ 80A
@ 20A
@ 40A
@ 80A
@ 20A
@ 40A
@ 80A
T
J
= 25°C
T
J
= 100°C
T
J
= 125°C
Conditions
T
J
= -55°C
R
T
J
= 25°CR
T
J
= 125°C
R
I
RM
Max. Reverse Leakage Current
(Per Leg) See Fig. 2Q
1.5
75
200
V
R
= rated V
R
R
C
T
L
S
Max. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
2600
5.9
V
R
= 5V
DC
( 1MHz, 25°C )
R
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case (Per Leg)
R
thJC
Max. Thermal Resistance, Junction
to Case (Per Package)
wt
Weight (Typical)
Die Size (Typical)
Case Style
Q
Pulse Width < 300µs, Duty Cycle < 2%
2.6
150X180
SMD-1
g
mils
0.63
°C/W
DC operation
Limits Units
-55 to 150
-55 to 150
1.25
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
2
www.irf.com
80SCLQ030
1000
Reverse Current - I R ( mA )
100
125°C
100°C
100
10
75°C
1
0.1
25°C
0.01
Instantaneous Forward Current - I F (A)
0
10
20
30
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage (Per Leg)
10
10000
Tj = 125°C
Tj = 25°C
Junction Capacitance - CT (pF)
Tj = -55°C
T J = 25°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V F (V)
1000
0
10
20
30
Fig. 1 - Max. Forward Voltage Drop Characteristics
(Per Leg)
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
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3
80SCLQ030
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE

(THERMAL RESPONSE)
0.01
0.00001

Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.01

P
DM
t
1
t
2
1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
180
Allowable Case Temprature - (°C)
160
140
120
100
80
60
40
20
0
0
20
40
60
80SCLQ030
R thJC = 0.63°C/W
DC
80
100
120
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
4
www.irf.com

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