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BPW96A

Description
Phototransistors NPN Phototransistor 70V 150mW 850nm
CategoryLED optoelectronic/LED    photoelectric   
File Size112KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Phototransistors NPN Phototransistor 70V 150mW 850nm

BPW96A Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
Maximum dark power200 nA
Installation featuresTHROUGH HOLE MOUNT
Maximum on-state current0.1 A
Maximum operating temperature100 °C
Minimum operating temperature-20 °C
peak wavelength830 nm
Maximum power dissipation0.1 W
Maximum response time0.000004 s
surface mountNO
Base Number Matches1
BPW96
Vishay
Semiconductors
Silicon NPN Phototransistor
Description
BPW96 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1
¾
(ø 5 mm) package. Due to its waterclear epoxy the de-
vice is sensitive to visible and near infrared radiation.
The viewing angle of
±
20
°
makes it insensible to ambi-
ent straylight.
Features
D
D
D
D
D
D
Fast response times
High photo sensitivity
Standard T–1
¾
(ø 5 mm) clear plastic package
Angle of half sensitivity
ϕ
=
±
20
°
Suitable for visible and near infrared radiation
Selected into sensitivity groups
94 8391
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
70
5
50
100
150
100
–55...+100
260
350
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
47
°
C
x
x
t
x
3s
Document Number 81532
Rev. 3, 16-Nov-99
www.vishay.com
1 (6)

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BPW96A BPW96
Description Phototransistors NPN Phototransistor 70V 150mW 850nm Phototransistors NPN Phototransistor 70V 150mW 850nm
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Base Number Matches 1 1
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