PRS07 series
Fast soft-recovery rectifiers
Rev. 02 — 26 July 2004
Product data sheet
1. Product profile
1.1 General description
Fast soft-recovery rectifier diodes in a cavity free cylindrical glass surface mounted
package using Implotec™ technology.
1.2 Features
s
Low leakage current
s
Hermetically sealed package
s
Glass passivated
s
Small package.
1.3 Applications
s
Switched-mode power supplies
s
Snubber diode.
1.4 Quick reference data
s
V
R
≤
600 V (PRS07J)
s
V
R
≤
400 V (PRS07G)
s
V
R
≤
200 V (PRS07D)
s
V
F
≤
1.2 V
s
I
F(AV)
≤
1.7 A
s
t
rr
≤
250 ns.
2. Pinning information
Table 1:
Pin
a
k
Discrete pinning
Description
anode (a)
k
a
001aaa020
Simplified outline
Symbol
cathode (k)
k
a
SOD87
SOD87
Philips Semiconductors
PRS07 series
Fast soft-recovery rectifiers
3. Ordering information
Table 2:
Ordering information
Package
Name
PRS07D
PRS07G
PRS07J
SOD87
Description
Hermetically sealed glass surface mounted package; Implotec™
technology; 2 connectors
Version
SOD87
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
RRM
repetitive peak reverse voltage
PRS07D
PRS07G
PRS07J
V
RWM
crest working reverse voltage
PRS07D
PRS07G
PRS07J
V
R
reverse voltage
PRS07D
PRS07G
PRS07J
I
F(AV)
average forward current
T
tp
= 65
°C;
Figure 1;
averaged over any 20 ms period
T
amb
= 45
°C;
Figure 2;
mounted on a printed-circuit board;
Figure 6;
averaged over any 20 ms period
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current
T
tp
= 105
°C
T
amb
= 60
°C
non-repetitive peak forward current t
p
= 8.3 ms half sine wave;
T
j
= 150
°C
prior to surge; V
R
= V
RRM(max)
storage temperature
junction temperature
-
-
-
-
-
200
400
600
1.7
0.6
V
V
V
A
A
-
-
-
200
400
600
V
V
V
-
-
-
200
400
600
V
V
V
Conditions
Min
Max
Unit
-
-
-
−65
−65
13
5.5
20
+150
+150
A
A
A
°C
°C
9397 750 13204
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 26 July 2004
2 of 9
Philips Semiconductors
PRS07 series
Fast soft-recovery rectifiers
3
I
F(AV)
(A)
003aaa637
0.8
I
F(AV)
(A)
0.6
003aaa638
2
0.4
1
0.2
0
0
40
80
120
T
tp
(°C)
160
0
0
40
80
160
120
T
amb
(°C)
a = 1.42; V
R
= V
RRM(max)
;
δ
= 0.5.
a = 1.42; V
R
= V
RRM(max)
;
δ
= 0.5.
Device mounted as shown in
Figure 6.
Fig 1. Average forward current as a function of
tie-point temperature (including losses due to
reverse leakage); maximum values.
Fig 2. Average forward current as a function of
ambient temperature (including losses due to
reverse leakage); maximum values.
5. Thermal characteristics
Table 4:
R
th(j-tp)
R
th(j-a)
Thermal characteristics
Conditions
mounted on a printed-circuit
board, 1.5 mm thick; copper
thickness
≥
40
µm;
Figure 6
Min
-
-
Typ
30
150
Max
-
-
Unit
K/W
K/W
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Symbol Parameter
9397 750 13204
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 26 July 2004
3 of 9
Philips Semiconductors
PRS07 series
Fast soft-recovery rectifiers
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
F
forward voltage
I
F
= 0.7 A;
Figure 3
T
j
= 25
°C
T
j
= 150
°C
I
R
reverse current
V
R
= V
RRM
;
Figure 4
T
j
= 25
°C
T
j
= 125
°C
Dynamic characteristics
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 4 V
switching from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
Figure 7
-
-
9
-
-
250
pF
ns
-
-
-
-
10
50
µA
µA
-
-
-
-
1.2
1.05
V
V
Conditions
Min
Typ
Max
Unit
10
I
F
(A)
8
003aaa639
10
3
I
R
(µA)
003aaa622
10
2
6
4
T
j
= 150
°C
2
25
°C
0
0
1
2
V
F
(V)
3
1
0
40
80
120
160
T
j
(°C)
10
T
j
= 25
°C.
T
j
= 25
°C.
Fig 3. Forward current as a function of forward
voltage; maximum values.
Fig 4. Reverse current as a function of junction
temperature; maximum values.
9397 750 13204
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 26 July 2004
4 of 9
Philips Semiconductors
PRS07 series
Fast soft-recovery rectifiers
10
2
C
d
(pF)
003aaa623
50
4.5
10
50
2.5
1
1
10
10
2
V
R
(V)
10
3
Dimensions in mm
1.25
msb213
f = 1 MHz; T
j
= 25
°C.
Fig 5. Diode capacitance as a function of reverse
voltage; typical values.
Fig 6. Printed-circuit board for surface mounting.
DUT
+
10
Ω
25 V
1
Ω
50
Ω
I
F
(A)
0.5
t
rr
0
0.25
0.5
I
R
(A)
1.0
t
mam057
T
j
= 25
°C.
Fig 7. Test circuit and reverse recovery time waveform definition.
9397 750 13204
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 26 July 2004
5 of 9
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