L6590
FULLY INTEGRATED POWER SUPPLY
s
s
s
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WIDE-RANGE MAINS OPERATION
"ON-CHIP" 700V V(BR)DSS POWER MOS
65 kHz INTERNAL OSCILLATOR
2.5V ± 2% INTERNAL REFERENCE
STANDBY MODE FOR HIGH EFFICIENCY AT
LIGHT LOAD
OVERCURRENT AND LATCHED
OVERVOLTAGE PROTECTION
NON DISSIPATIVE BUILT-IN START-UP CIRCUIT
THERMAL SHUTDOWN WITH HYSTERESIS
BROWNOUT PROTECTION (SMD PACKAGE
ONLY)
MINIDIP
ORDERING NUMBERS:
L6590N
s
- HOME APPLIANCES/LIGHTING
LINE CARD, DC-DC CONVERTERS
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TYPICAL APPLICATION CIRCUIT
AC line
88 to 264 Vac
Pout
up to 15W
AC line
88 to 264 Vac
DRAIN
MAIN APPLICATIONS
s
WALL PLUG POWER SUPPLIES UP TO 15 W
s
AC-DC ADAPTERS
s
AUXILIARY POWER SUPPLIES FOR:
- CRT AND LCD MONITOR (BLUE ANGEL)
- DESKTOP PC/SERVER
- FAX, TV, LASER PRINTER
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DESCRIPTION
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SO16W
s)
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The L6590 is a monolithic switching regulator de-
signed in BCD OFF-LINE technology, able to operate
with wide range input voltage and to deliver up to
15W output power. The internal power switch is a lat-
eral power MOSFET with a typical R
DS(on)
of 13Ω
and a V
(BR)DSS
of 700V minimum.
P
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L6590D
Pout
up to 15W
DRAIN
1
1
L6590
4
Vcc
L6590
3
6, 7, 8
GND
VFB
Vcc
3
6, 7, 8
5
5
COMP
4
GND
COMP
VFB
Primary Feedback
Secondary Feedback
October 2000
1/23
L6590
DESCRIPTION
(continued)
The MOSFET is source-grounded, thus it is possible
to build flyback, boost and forward converters.
The device can work with secondary feedback and a
2.5V±2% internal reference, in addition to a high gain
error amplifier, makes possible also the use in appli-
cations either with primary feedback or not isolated.
The internal fixed oscillator frequency and the integrated
non dissipative start-up generator minimize the external
component count and power consumption.
The device is equipped with a standby function that
automatically reduces the oscillator frequency from
65 to 22 kHz under light load conditions to enhance
BLOCK DIAGRAM
DRAIN
(1)
[1]
START-UP
efficiency (P
in
< 1W @ P
out
= 0.5W with wide range
mains).
Internal protections like cycle-by-cycle current limiting,
latched output overvoltage protection, mains undervolt-
age protection (SMD version only) and thermal shut-
down generate a 'robust' design solution.
The IC uses a special leadframe with the ground pins
(6, 7 and 8 in minidip, 9 to16 in SO16W package) in-
ternally connected in order for heat to be easily re-
moved from the silicon die. An heatsink can then be
realized by simply making provision of few cm
2
of
copper on the PCB. Furthermore, the pin(s) close to
the high-voltage one are not connected to ease com-
pliance with safety distances on the PCB.
[x] : L6590D (SO16W)
THERMAL
SHUTDOWN
SUPPLY
& UVLO
VREF
)-
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P
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+
-
b
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so
OVP
+
-
te
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VREF
+
-
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P
VCC
(3)
[4]
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BROWNOUT
GND
(6,7,8)
PGND
[9, ..., 16]
OCP
P
te
le
2.5V
-
+
SGND
[5]
od
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s)
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BOK
[6]
PWM
STANDBY
OSC
65/22 kHz
VFB
(5)
[8]
2.5V
COMP
(4)
[7]
PIN CONNECTIONS
(Top view)
DRAIN
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
SO16W
L6590D
DRAIN
GND
GND
GND
VFB
N.C.
N.C.
Vcc
N.C.
Vcc
SGND
COMP
BOK
COMP
MINIDIP
L6590
VFB
2/23
L6590
PIN FUNCTIONS
Pin#
Name
L6590
1
2
3
L6590D
1
2, 3
4
DRAIN
N.C.
V
CC
Drain connection of the internal power MOSFET. The internal high voltage start-up
generator sinks current from this pin.
Not internally connected. Provision for clearance on the PCB.
Supply pin of the IC. An electrolytic capacitor is connected between this pin and ground.
The internal start-up generator charges the capacitor until the voltage reaches the start-
up threshold. The PWM is stopped if the voltage at the pin exceeds a certain value.
Output of the Error Amplifier. Used for control loop compensation or to directly control
PWM with an optocoupler.
Inverting input of the Error Amplifier. The non-inverting one is internally connected to a
2.5V± 2% reference. This pin can be grounded in some feedback schemes.
Connection of both the source of the internal MOSFET and the return of the bias current
of the IC. Pins connected to the metal frame to facilitate heat dissipation.
Brownout Protection. If the voltage applied to this pin is lower than 2.5V the PWM is
disabled. This pin is typically used for sensing the input voltage of the converter through
a resistor divider. If not used, the pin can be either left floating or connected to Vcc
through a 15 kΩ resistor.
Current return for the bias current of the IC.
Description
4
5
6 to 8
-
7
8
-
6
COMP
VFB
GND
BOK
-
-
5
9 to 16
SGND
PGND
Connection of the source of the internal MOSFET. Pins connected to the metal frame to
facilitate heat dissipation.
)-
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THERMAL DATA
Symbol
R
thj-amb
R
thj-pins
Parameter
Thermal Resistance Junction to ambient (*)
Thermal Resistance Junction to pins
(*) Value depending on PCB copper area and thickness
.
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P
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Minidip
35 to 60
15
od
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Unit
°C/W
°C/W
SO16W
40 to 65
20
ABSOLUTE MAXIMUM RATINGS
Symbol
V
ds
I
d
Drain Source Voltage
Drain Current
Parameter
Value
-0.3 to 700
0.7
18
20
3
5
1
1.5
-40 to 150
-40 to 150
Unit
V
A
V
mA
mA
V
mA
W
°C
°C
V
cc
IC Supply Voltage
I
clamp
V
cc
Zener Current
Error Amplifier Ouput Sink Current
Voltage on Feedback Input
BOK pin Sink Current
P
tot
T
j
T
stg
Power Dissipation at T
amb
< 50°C (Minidip and SO16W)
3 cm
2
, 2 oz copper dissipating area on PCB
Operating Junction Temperature
Storage Temperature
3/23
L6590
ELECTRICAL CHARACTERISTCS
(T
j
= -25 to 125°C, V
cc
= 10V; unless otherwise specified)
Symbol
POWER SECTION
V
(BR)DSS
Drain Source Voltage
I
dss
R
DS(on)
Off state drain current
Drain-to-Source on resistance
R
DS(on)
vs. T
j
: see fig. 20
I
d
< 200 µA; T
j
= 25 °C
V
ds
= 560V; T
j
= 125 °C
I
d
= 120mA; T
j
= 25 °C
I
d
= 120mA; T
j
= 125 °C
13
23
700
200
16
28
V
µA
Ω
Parameter
Test Condition
Min.
Typ.
Max.
Unit
ERROR AMP SECTION
V
FB
Input Voltage
T
j
= 25 °C
T
j
= 125°C
Ib
Avol
B
SVR
I
sink
I
source
V
COMPH
V
COMPL
E/A Input Bias Current
DC Gain
Unity Gain Bandwidth
Supply voltage Rejection
Output Sink Current
Output Source Current
Vout High
Vout Low
f = 120 Hz
V
COMP
= 1V
V
FB
= 0 to 2.5 V
open loop
60
2.45
2.4
2.5
2.5
2.55
V
COMP
= 3.5V; VFB = 2V
I
source
= -0.5mA; VFB=2V
OSCILLATOR SECTION
F
osc
Oscillator Frequency
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D
min
Min. Duty Cycle
D
max
Max. Duty Cycle
DEVICE OPERATION SECTION
I
op
I
Q
Operating Supply Current
Quiescent Current
I
charge
V
CC
charge Current
V
CCclamp
V
CC
clamp Voltage
V
ccon
V
ccoff
V
dsmin
Start Threshold
voltage
Min operating voltage after Turn
on
Drain start voltage
(*)
(*)
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I
sink
= 1mA ; VFB=3V
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-
so
b
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0.7
r
P
d
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70
1
70
1
-1
4.50
0.3
ct
u
2.6
5
-2.5
s)
(
V
µA
dB
-0.5
T
j
= 25 °C
so
b
-O
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3.8
r
P
od
65
65
s)
t(
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V
1
V
MHz
dB
mA
mA
58
52
72
74
0
kHz
V
COMP
= 1V
V
COMP
= 4V
67
70
%
%
73
fsw = Fosc
4.5
3.5
-3
-2.5
16.5
14
6
-4.5
-4.5
17
14.5
6.5
7
6
-7
-7.5
17.5
15
7
40
mA
mA
mA
mA
V
V
V
V
MOS disabled
V
cc
= 0V to V
ccon
- 0.5V;
V
ds
= 100 to 400V; T
j
= 25°C
V
cc
= 0V to V
ccon
- 0.5V;
V
ds
= 100 to 400V
I
clamp
= 10mA (*)
4/23
L6590
ELECTRICAL CHARACTERISTICS
(continued)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
CIRCUIT PROTECTIONS
I
pklim
OVP
LEB
Pulse-by-pulse Current Limit
Overvoltage Protection
Masking Time
di/dt = 120 mA/ µs
I
cc
= 10 mA (*)
After MOSFET turn-on (**)
550
16
625
16.5
120
700
17
mA
V
ns
STANDBY SECTION
F
SB
I
pksb
I
pkno
Oscillator Frequency
Peak switch current for Standby
Operation
Peak switch current for Normal
Operation
Transition from F
osc
to F
SB
Transition from F
SB
to F
osc
19
22
80
190
25
kHz
mA
mA
BROWNOUT PROTECTION (L6590D only)
V
th
I
Hys
V
CL
Threshold Voltage
Current Hysteresis
Clamp Voltage
Voltage either rising or falling
V
pin
= 3V
I
pin
= 0.5 mA
THERMAL SHUTDOWN
(***)
Threshold
)-
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P
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Hysteresis
(*) Parameters tracking one the other
(**) Parameter guaranteed by design, not tested in production
(***) Parameters guaranteed by design, functionality tested in production
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2.4
r
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2.5
-50
6.4
165
40
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-30
5.6
P
te
le
150
od
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s)
t(
uc
2.6
V
-70
7.2
V
µA
°C
°C
Figure 1. Start-up & UVLO Thresholds
Vcc [V]
Figure 2. Start-up Current Generator
Icc [mA]
16
14
12
10
8
5.5
5
Vdrain = 40 V
Tj = -25 °C
Start-up
4.5
4
Tj = 25 °C
UVLO
3.5
3
Tj = 125 °C
6
-50
0
50
Tj [°C]
100
150
0
2
4
6
Vcc [V]
8
10
12
5/23
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