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BAS70JW-7-F

Description
Schottky Diodes & Rectifiers SCHOTTKY DIODE SOT-363 200MW 70V
Categorysemiconductor    Discrete semiconductor   
File Size77KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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Schottky Diodes & Rectifiers SCHOTTKY DIODE SOT-363 200MW 70V

BAS70JW-7-F Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-363
If - Forward Current0.07 A
Vrrm - Repetitive Reverse Voltage70 V
Vf - Forward Voltage1 V
Ifsm - Forward Surge Current0.1 A
ConfigurationDual Parallel
TechnologySi
Ir - Reverse Current0.1 uA
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1 mm
Length2.2 mm
Operating Temperature Range- 55 C to + 125 C
TypeSchottky Diode
Width1.35 mm
Factory Pack Quantity3000
trr - Reverse Recovery time5 ns
Unit Weight0.000212 oz
BAS70JW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
Please click here to visit our online spice models database.
Features
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please see Ordering Information, Note 7, on Page 2
Orientation: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
C
1
C
2
A
1
A
2
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
Value
70
49
70
100
Unit
V
V
mA
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t < 1.0s
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
200
625
-55 to +125
-65 to +125
Unit
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
70
Max
410
1000
100
2.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10μA
t
p
<300µs
,
I
F
= 1.0mA
t
p
<300µs
, I
F
= 15mA
t
p
< 300µs
,
V
R
= 50V
V
R
= 0V
,
f = 1.0MHz
I
F
=
I
R
= 10mA to
I
R
= 1.0mA,
I
rr
= 0.1 x
I
R
, R
L
= 100Ω
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS70JW
Document number: DS30188 Rev. 13 - 2
1 of 3
www.diodes.com
June 2008
© Diodes Incorporated

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