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SMMBD301LT3G

Description
Schottky Diodes & Rectifiers SS SOT23 SWCH DIO SPCL
CategoryDiscrete semiconductor    diode   
File Size187KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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SMMBD301LT3G Overview

Schottky Diodes & Rectifiers SS SOT23 SWCH DIO SPCL

SMMBD301LT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time5 weeks
ConfigurationSINGLE
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.45 V
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
www.onsemi.com
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Extremely Low Minority Carrier Lifetime
15 ps (Typ)
Very Low Capacitance
1.5 pF (Max) @ V
R
= 15 V
Low Reverse Leakage
I
R
= 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Total Device Dissipation
@ T
A
= 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Operating Junction
Temperature Range
Storage Temperature Range
T
J
T
stg
Symbol
V
R
I
F
P
F
280
200
Value
30
200 (Max)
Unit
V
mA
MW
TO−92 2−Lead
CASE 182
STYLE 1
TO−92
2
CATHODE
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
SOT−23
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
301
AYW
G
G
1
TO−92
SOT−23
4T M
G
G
2.8
2.0
−55
to
+125
−55
to
+150
mW/°C
°C
°C
A
= Assembly Location
Y
= Year
W = Work Week
4T = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 1994
March, 2018
Rev. 9
1
Publication Order Number:
MBD301/D
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