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BC558BRL1G

Description
Bipolar Transistors - BJT 100mA 30V PNP
CategoryDiscrete semiconductor    The transistor   
File Size78KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC558BRL1G Overview

Bipolar Transistors - BJT 100mA 30V PNP

BC558BRL1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-92
package instructionLEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)360 MHz
Base Number Matches1
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC556
BC557
BC558
Collector - Base Voltage
BC556
BC557
BC558
Emitter - Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Base Current − Peak
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
BM
P
D
P
D
T
J
, T
stg
V
CBO
−80
−50
−30
−5.0
−100
−200
−200
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
−65
−45
−30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
55xx
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
March, 2007 − Rev. 3
Publication Order Number:
BC556B/D

BC558BRL1G Related Products

BC558BRL1G N954-03-1K58-CA BC558BZL1 BC558BRL BC557B BC558BRL1 BC557AZL1G
Description Bipolar Transistors - BJT 100mA 30V PNP Array/Network Resistor, Bussed, Thin Film, 0.1W, 1580ohm, 50V, 0.25% +/-Tol, -25,25ppm/Cel, 2021, Bipolar Transistors - BJT 100mA 30V PNP Bipolar Transistors - BJT 100mA 30V PNP Bipolar Transistors - BJT 100mA 50V PNP Bipolar Transistors - BJT 100mA 30V PNP Bipolar Transistors - BJT 100mA 50V PNP
Reach Compliance Code unknown compliant not_compliant not_compliant unknown not_compliant unknown
Maker ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 - TO-92 TO-92 - TO-92 TO-92
package instruction LEAD FREE, CASE 29-11, TO-226, 3 PIN - CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CYLINDRICAL, O-PBCY-W3 CASE 29-11, TO-226, 3 PIN LEAD FREE, CASE 29-11, TO-226, 3 PIN
Contacts 3 - 3 3 3 3 3
Manufacturer packaging code 29-11 - CASE 29-11 CASE 29-11 29-11 CASE 29-11 29-11
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Other features EUROPEAN PART NUMBER - EUROPEAN PART NUMBER EUROPEAN PART NUMBER - EUROPEAN PART NUMBER EUROPEAN PART NUMBER
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V - 30 V 30 V - 30 V 45 V
Configuration SINGLE - SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 180 - 180 180 - 180 120
JEDEC-95 code TO-92 - TO-92 TO-92 - TO-92 TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3
JESD-609 code e1 e0 e0 e0 - e0 e1
Number of components 1 - 1 1 - 1 1
Number of terminals 3 8 3 3 - 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND - ROUND ROUND
Package form CYLINDRICAL SMT CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 - 240 240 - 240 260
Polarity/channel type PNP - PNP PNP - PNP PNP
Maximum power dissipation(Abs) 1.5 W - 0.625 W 0.625 W - 0.625 W 1.5 W
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO - NO NO - NO NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM - BOTTOM BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 - 30 30 - 30 40
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 360 MHz - 360 MHz 360 MHz - 360 MHz 320 MHz
Base Number Matches 1 - 1 1 - 1 -
Is it Rohs certified? - incompatible incompatible incompatible - incompatible -
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