BUX48
BUX48A
High voltage fast-switching NPN power transistors
Features
■
■
■
■
NPN transistors
High voltage capability
High current capability
Fast switching speed
Applications
■
■
1
Switching mode power supplies
Flyback and forward single transistor low power
converters
Figure 1.
Description
The BUX48 and BUX48A are multi epitaxial mesa
NPN transistors mounted in TO-3 metal can.
They are intended for switching and industrial
applications for single and three-phase mains.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
2
TO-3
uc
d
s)
t(
Internal schematic diagram
Table 1.
Device summary
Marking
BUX48
BUX48A
Package
TO-3
tray
BUX48A
TO-3
Packaging
Order code
BUX48
November 2007
Rev 1
1/9
www.st.com
9
Absolute maximum ratings
BUX48 BUX48A
1
Absolute maximum ratings
Table 2.
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CM
I
CP
I
B
I
BM
P
TOT
T
stg
T
J
Absolute maximum ratings
Value
Parameter
BUX48
Collector-emitter voltage (R
BE
= 10Ω)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current
Collector peak current non repetitive (t
p
< 20 µs)
Base current
Base peak current non repetitive (t
p
< 20 µs)
Total dissipation at T
c
= 25 °C
Storage temperature
850
850
400
7
15
30
BUX48A
1000
1000
450
Unit
V
V
Unit
Max. operating junction temperature
Table 3.
Symbol
R
thj-case
Thermal data
Thermal resistance junction-case
bs
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et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
t
le
P
e
ro
55
4
uc
d
s)
t(
V
A
A
A
A
A
W
°C
°C
V
20
175
-65 to 200
200
Parameter
__max
Value
1
Unit
°C/W
2/9
BUX48 BUX48A
Electrical characteristics
2
Electrical characteristics
(T
case
= 25°C; unless otherwise specified)
Table 4.
Symbol
I
CES
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(R
BE
= 10Ω)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= rated V
CES
V
CE
= rated V
CES,
T
c
= 125°C
V
CE
= rated V
CER
V
CE
= rated V
CER,
T
c
= 125°C
V
EB
= 5 V
I
C
= 200 mA
for
BUX48
for
BUX48A
I
E
= 50 mA
for
BUX48
I
C
= 10 A
Min.
Typ.
Max.
200
2
500
4
Unit
µA
mA
µA
I
CER
I
EBO
Collector-emitter
V
CEO(sus)(1)
sustaining voltage
(I
B
= 0)
V
EBO
Emitter-base voltage
(I
C
= 0)
V
CE(sat)(1)
Collector-emitter
saturation voltage
bs
O
et
l
o
V
BE(sat)(1)
od
r
P
e
uc
s)
t(
O
-
I
C
= 15 A
I
C
= 15 A
so
b
te
le
I
B
= 2 A
I
B
= 4 A
I
B
= 3 A
I
B
= 1.6 A
I
B
= 2.4 A
I
B
= 2 A
I
B
= 1.6 A
r
P
400
450
7
du
o
ct
1
s)
(
mA
mA
V
V
30
V
1.5
3.5
5
1.5
5
V
V
V
V
V
for
BUX48A
I
C
= 8 A
I
C
= 12 A
for
BUX48
I
C
= 10 A
for
BUX48A
I
C
= 8 A
Base-emitter saturation
voltage
1.6
1.6
V
V
3/9
Electrical characteristics
Table 4.
Symbol
BUX48 BUX48A
Electrical characteristics
Parameter
Test conditions
for
BUX48
V
CC
= 150 V
I
B1
= -I
B2
= 2 A
for
BUX48A
V
CC
= 150 V
I
B1
= -I
B2
= 1.6 A
Inductive load
Storage time
Fall time
for
BUX48
V
CC
= 300 V
V
BE
= -5 V
L
B
= 3 µH
for
BUX48
V
CC
= 300 V
V
BE
= -5 V
L
B
= 3 µH
Inductive load
Storage time
Fall time
for
BUX48A
V
CC
= 300 V
V
BE
= -5 V
L
B
= 3 µH
I
C
= 10 A
I
B1
= 2 A
T
C
= 125
o
C
I
C
= 8 A
I
B1
= 1.6 A
I
C
= 10 A
I
B1
= 2 A
I
C
= 8 A
Min.
Typ.
Max.
Unit
t
on
t
s
t
f
Resistive load
Turn-on time
Storage time
Fall time
I
C
= 10 A
1
3
0.8
µs
µs
µs
t
s
t
f
2.7
0.16
t
s
t
f
Inductive load
Storage time
Fall time
t
s
t
f
t
s
t
f
Inductive load
Storage time
Fall time
2.1
bs
O
od
r
P
Test circuits
te
le
o
Figure 2.
1. Pulsed duration = 300 ms, duty cycle
≤
2%.
uc
)-
(s
t
for
BUX48A
V
CC
= 300 V
V
BE
= -5 V
L
B
= 3 µH
b
O
so
t
le
P
e
ro
uc
d
3
0.13
s)
t(
5
µs
µs
µs
µs
0.4
µs
µs
I
C
= 8 A
I
B1
= 1.6 A
T
C
= 125
o
C
5
0.4
µs
µs
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
4/9
BUX48 BUX48A
Figure 3.
Inductive load switching test circuit
Electrical characteristics
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
bs
O
et
l
o
ro
P
e
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d
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t(
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b
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t(
5/9
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