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BC846BW-RF

Description
Bipolar Transistors - BJT Transistor 200mW
Categorysemiconductor    Discrete semiconductor   
File Size227KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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Bipolar Transistors - BJT Transistor 200mW

BC846BW-RF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Package / CaseSOT-323-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
NumOfPackaging3
Factory Pack Quantity3000
Unit Weight0.000176 oz
BC846AW - BC850CW
Taiwan Semiconductor
Small Signal Product
NPN Transistor
FEATURES
- Low reverse current, high reliability
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-323
MECHANICAL DATA
- Case: SOT-323 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
BC846AW/BW/CW
BC847AW/BW/CW
Collector-Base Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
BC846AW/BW/CW
BC847AW/BW/CW
Collector-Emitter Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
BC846AW/BW/CW
BC847AW/BW/CW
Emitter-Base Voltage
BC848AW/BW/CW
BC849AW/BW/CW
BC850AW/BW/CW
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
I
C
I
CM
T
J
, T
STG
V
EBO
V
CEO
V
CBO
SYMBOL
P
D
VALUE
200
80
50
30
30
50
65
45
30
30
45
6
6
5
5
5
0.1
0.2
-55 to + 150
A
A
°C
V
V
V
UNIT
mW
Document Number: DS_S1502002
Version: B15
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