74V1G66
Single bilateral switch
Features
■
High speed:
t
PD
= 0.3 ns (typ.) at V
CC
= 5 V
t
PD
= 0.4 ns (typ.) at V
CC
= 3.3 V
Low power dissipation:
I
CC
= 1
μA
(max.) at T
A
= 25 °C
Low "ON" resistance:
R
ON
= 6.5
Ω
(typ.) at V
CC
= 5 V I
I/O
= 1 mA
R
ON
= 8.5
Ω
(typ.) at V
CC
= 3.3 V I
I/O
= 1 mA
Sine wave distortion:
0.04% at V
CC
= 3.3 V f = 1 kHz
Wide operating range:
V
CC
(opr) = 2 V to 5.5 V
Improved latch-up immunity
SOT23-5L
■
■
■
■
■
SOT323-5L
Description
The 74V1G66 is an advanced high-speed CMOS
single bilateral switch fabricated in silicon gate
C
2
MOS technology. It achieves high speed
propagation delay and very low ON resistances
while maintaining true CMOS low power
consumption. This bilateral switch handles rail to
rail analog and digital signals that may vary
across the full power supply range (from GND to
V
CC
).
The C input is provided to control the switch and it
is compatible with standard CMOS outputs. The
switch is ON (port I/O is connected to port O/I)
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
applications as battery powered systems or test
equipments.
Table 1.
Device summary
Order code
74V1G66STR
74V1G66CTR
The 74V1G66 is available in the commercial and
extended temperature range in SOT23-5L and
SOT323-5L packages.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
Package
SOT23-5L
SOT323-5L
Packaging
Tape and reel
Tape and reel
October 2008
Rev 8
1/15
www.st.com
15
74V1G66
Maximum rating
2
Maximum rating
Stressing the device above the rating listed in the “Absolute Maximum Ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Table 4.
Symbol
V
CC
V
I
V
IC
V
O
I
IK
I
IK
I
OK
I
O
I
CC
or
I
GND
T
stg
T
L
Supply voltage
DC input voltage
DC control input voltage
DC Output voltage
DC input diode current
DC control input diode current
DC output diode current
DC output current
DC V
CC
or ground current
Storage temperature
Lead temperature (10 sec)
Absolute maximum ratings
Parameter
Value
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
±
20
- 20
±
20
±
50
±
50
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
Table 5.
Symbol
V
CC
V
I
V
IC
V
O
T
op
dt/dv
1.
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Control input voltage
Output voltage
Operating temperature
Input rise and fall time
(1)
V
CC
= 5.0 V
Value
2 to 5.5
0 to V
CC
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
Unit
V
V
V
V
°C
ns/V
V
IN
from 30% to 70% of V
CC
on control pin.
3/15
74V1G66
Maximum rating
Table 7.
AC electrical characteristics (C
L
= 50 pF, input t
r
= t
f
= 3 ns)
Test condition
Value
T
A
= 25°C
Min
3.3
(1)
Typ
0.4
t
r
= t
f
= 6 ns
0.3
5.0
5.0
2.5
2.0
Max
0.8
0.6
7.5
7.5
4.0
4.0
-40 to 85°C
Min
Max
1.2
1.0
9.0
9.0
5.0
5.0
-55 to
125°C
Min
Max
2.4
ns
2.0
10.0
ns
10.0
7.0
ns
7.0
Unit
Symbol
Parameter
V
CC
(V)
t
PD
t
PLZ
t
PHZ
t
PZL
t
PZH
Delay time
Output disable
time
Output enable time
5.0
(2)
3.3
(1)
5.0
(2)
3.3
(1)
5.0
(2)
R
L
= 500
Ω
R
L
= 1 K
Ω
1. Voltage range is 3.3 V ± 0.3 V.
2. Voltage range is 5 V ± 0.5 V.
Table 8.
Capacitive characteristics
Test condition
Value
T
A
= 25°C
Min
Typ
3
10
3.3
5.0
2.5
pF
3
Max
10
-40 to 85°C
Min
Max
10
-55 to
125°C
Min
Max
10
pF
pF
Unit
Symbol
Parameter
V
CC
(V)
C
IN
C
I/O
C
PD
Input capacitance
Output
capacitance
Power dissipation
capacitance
(1)
1. C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current
consumption without load. (Refer to the test circuit). Average operating current can be obtained by the following equation.
I
CC
(opr) = C
PD
x V
CC
x f
IN
+ I
CC
.
5/15
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