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MRF7S18125AHR3

Description
RF MOSFET Transistors HV7 1.8GHZ CW 125W NI780
CategoryDiscrete semiconductor    The transistor   
File Size467KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF7S18125AHR3 Overview

RF MOSFET Transistors HV7 1.8GHZ CW 125W NI780

MRF7S18125AHR3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Manufacturer packaging codeCASE 465-06
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF7S18125AH
Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 1100 mA, P
out
=
125 Watts CW, f = 1880 MHz.
Power Gain — 17 dB
Drain Efficiency — 55%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 1100 mA,
P
out
= 57 Watts Avg., Full Frequency Band (1805 - 1880 MHz).
Power Gain — 17 dB
Drain Efficiency — 38%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.75% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW
Output Power
Typical P
out
@ 1 dB Compression Point
]
140 Watts CW
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18125AHR3
MRF7S18125AHSR3
1805- 1880 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S18125AHR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S18125AHSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 71 W CW
Symbol
R
θJC
Value
(2,3)
0.31
0.34
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S18125AHR3 MRF7S18125AHSR3
1
RF Device Data
Freescale Semiconductor

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