NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
ZTX600
ZTX601
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX600
160
140
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX601
180
160
UNIT
V
V
V
A
A
W
mW/ °C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
160
140
10
0.01
10
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.75
0.85
1.7
1.5
0.1
10
1.1
1.2
1.9
1.7
3-206
0.75
0.85
1.7
1.5
ZTX600
MIN. TYP.
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
I
CBO
180
160
10
ZTX601
MAX. MIN. TYP.
MAX.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
UNIT CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=140V
V
CB
=160V
V
CB
=140V,
T
=
=100°C
V
CB
=160V,
T
=
=100°C
V
EB
=8V
V
CES
=140V
V
CES
=160V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
IC=1A, V
CE
=5V*
0.01
10
0.1
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
10
1.1
1.2
1.9
1.7
V
V
V
V
ZTX600
ZTX601
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
h
FE
ZTX600
ZTX601
MIN. TYP.
Static Forward
Current Transfer
Ratio
Group A
Group B
Transition
Frequency
Input Capacitance
Output
Capacitance
Switching Times
f
T
C
ibo
C
obo
t
on
t
off
R
5
= 50KΩ
UNIT CONDITIONS.
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MHz
I
C
=100mA,
V
CE
=10V f=20MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
MAX. MIN. TYP.
1K
100K 2K
1K
MAX.
100K
1K
2K
1K
1K
2K
1K
5K
10K
5K
150
2K
5K
3K
10K
20K
10K
250
60
10
0.75
2.2
20K
1K
2K
1K
2K
5K
3K
10K
20K
10K
250
60
10
0.75
2.2
20K
100K
5K
100K 10K
5K
150
90
15
90
15
pF
pF
µ
s
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Maximum Power Dissipation (W)
1.0
R
5
= 5KΩ
0.8 R
5
= 1MΩ
R
5
=
∞
0.6
0.4
0.2
0
1
10
100
200
DC Conditions
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act)
0.0057
+25°
C
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-207
Embedded System
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