Ordering number : EN6546C
3LN01SS
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7
Ω
, Single SSFP
Features
•
•
•
http://onsemi.com
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
30
±10
0.15
0.6
0.15
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7029A-003
1.4
0.3
0.25
3
0 to 0.02
1
2
0.1
Ordering & Package Information
Device
3LN01SS-TL-E
Package
SSFP
SC-81
SSFP
SC-81
Shipping
8,000
pcs./reel
8,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
3LN01SS-TL-E
3LN01SS-TL-H
3LN01SS-TL-H
Packing Type: TL
Marking
1.4
0.3
0.8
0.45
0.6
0.2
LOT No.
LOT No.
YA
TL
0.07
1
2
1 : Gate
2 : Source
3 : Drain
SSFP
Electrical Connection
3
0.07
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002938/62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986 No.6546-1/6
3LN01SS
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=150mA, VGS=0V
VDS=10V, VGS=10V, ID=150mA
See specified Test Circuit.
VDS=10V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
Ratings
min
30
1
±10
0.4
0.15
0.22
2.9
3.7
6.4
7.0
5.9
2.3
19
65
155
120
1.58
0.26
0.31
0.87
1.2
3.7
5.2
12.8
1.3
typ
max
Unit
V
μA
μA
V
S
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VIN
D
G
3LN01SS
P.G
50Ω
S
VDD=15V
ID=80mA
RL=187.5Ω
VOUT
4V
0V
PW=10μs
D.C.≤1%
No.6546-2/6
3LN01SS
0.16
0.14
0.12
0.10
0.08
ID -- VDS
2.5
0.30
ID -- VGS
Ta=
--25
°
C
1.0
V
3.5V
4.0V
6.0
V
V
2.0
Drain Current, ID -- A
VDS=10V
0.25
3.0
V
Drain Current, ID -- A
0.15
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
IT00029
0.10
0
0
0.5
1.5
2.0
2.5
3.0
IT00030
Drain to Source Voltage, VDS -- V
10
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
10
25
0.05
RDS(on) -- ID
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
7
Ta
=7
5
°
C
--2
5
°
C
°
C
75
°
C
0.20
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
5
Ta=75°C
3
80mA
ID=40mA
25°C
--25°C
2
1.0
0.01
25
°
C
VGS=4V
2
3
5
7
0.1
2
3
5
IT00032
Gate to Source Voltage, VGS -- V
10
IT00031
100
RDS(on) -- ID
Drain Current, ID -- A
RDS(on) -- ID
VGS=2.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
7
7
5
3
2
VGS=1.5V
5
Ta=75°C
25°C
3
--25°C
10
7
5
3
2
Ta=75°C
--25°C
25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
5
IT00033
1.0
0.001
2
3
5
7
0.01
2
3
5
IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Forward Transfer Admittance,
|
yfs
|
-- S
Drain Current, ID -- A
1.0
7
5
3
2
|
yfs
|
-- ID
VDS=10V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
6
5
4
3
5V
=2.
GS
A, V
4.0V
0m
=4
S=
ID
, VG
mA
=80
ID
--
Ta=
25
°
C
75
°
C
25
°
C
0.1
7
5
3
2
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
0.01
0.01
2
3
5
7
0.1
2
3
5
IT00036
Ambient Temperature, Ta --
°C
IT00035
Drain Current, ID -- A
No.6546-3/6
3LN01SS
1.0
7
5
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD=15V
VGS=4V
Source Current, IS -- A
3
2
Ta
=7
5
°
C
25
°
C
--2
5
°
C
td(off)
tf
0.1
7
5
3
2
100
7
5
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
10
0.01
2
3
5
7
0.1
2
IT00038
Diode Forward Voltage, VSD -- V
100
7
5
Drain Current, ID -- A
10
Ciss, Coss, Crss -- VDS
f=1MHz
Gate to Source Voltage, VGS -- V
VGS -- Qg
VDS=10V
ID=150mA
9
8
7
6
5
4
3
2
1
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain to Source Voltage, VDS -- V
0.2
IT00039
Total Gate Charge, Qg -- nC
IT00040
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.1
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT01964
No.6546-4/6
3LN01SS
Outline Drawing
3LN01SS-TL-E, 3LN01SS-TL-H
Mass (g) Unit
0.0018 mm
* For reference
Land Pattern Example
Unit: mm
0.5
0.5
1.2
0.45
0.45
0.45 0.45
No.6546-5/6
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