BSC160N15NS5
MOSFET
OptiMOS
TM
5Power-Transistor,150V
Features
•N-channel,normallevel
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•Verylowreverserecoverycharge(Qrr)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
rr
Value
150
16
56
26
Unit
V
mΩ
A
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC160N15NS5
Package
PG-TDSON-8
Marking
160N15NS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-01-22
OptiMOS
TM
5Power-Transistor,150V
BSC160N15NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.2,2016-01-22
OptiMOS
TM
5Power-Transistor,150V
BSC160N15NS5
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
Values
Min.
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
Max.
56
36
224
43
20
96
150
Unit
A
A
mJ
V
W
°C
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
Typ.
0.78
-
Max.
1.3
50
Unit
K/W
K/W
Note/TestCondition
-
-
Thermal resistance, junction - ambient,
R
thJA
6 cm
2
cooling area
3)
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
4)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
150
3.0
-
-
-
-
-
-
20
Typ.
-
3.8
0.1
10
1
13.7
15.1
1
40
Max.
-
4.6
1
100
100
16
18.5
1.5
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=60µA
V
DS
=120V,V
GS
=0V,T
j
=25°C
V
DS
=120V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=28A,
V
GS
=8V,I
D
=14A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=28A
1)
2)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
Defined by design. Not subject to production test
Final Data Sheet
3
Rev.2.2,2016-01-22
OptiMOS
TM
5Power-Transistor,150V
BSC160N15NS5
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1370
341
9.6
9.6
3
10.8
2.6
Max.
1820
454
17
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=75V,f=1MHz
V
GS
=0V,V
DS
=75V,f=1MHz
V
GS
=0V,V
DS
=75V,f=1MHz
V
DD
=75V,V
GS
=10V,I
D
=28A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=28A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=28A,
R
G,ext
=3Ω
V
DD
=75V,V
GS
=10V,I
D
=28A,
R
G,ext
=3Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Symbol
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
Typ.
8
4
7.8
19
5.8
51
Max.
-
5.9
-
23.1
-
68.2
Unit
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=75V,I
D
=28A,V
GS
=0to10V
V
DD
=75V,I
D
=28A,V
GS
=0to10V
V
DD
=75V,I
D
=28A,V
GS
=0to10V
V
DD
=75V,I
D
=28A,V
GS
=0to10V
V
DD
=75V,I
D
=28A,V
GS
=0to10V
V
DD
=75V,V
GS
=0V
Table7Reversediode
Parameter
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.88
30.5
25.7
Max.
56
224
1.2
61
51.4
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=28A,T
j
=25°C
V
R
=75V,I
F
=28,di
F
/dt=100A/µs
V
R
=75V,I
F
=28,di
F
/dt=100A/µs
1)
2)
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.2,2016-01-22
OptiMOS
TM
5Power-Transistor,150V
BSC160N15NS5
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
120
Diagram2:Draincurrent
60
100
50
80
40
P
tot
[W]
60
I
D
[A]
0
50
100
150
200
30
40
20
20
10
0
0
0
50
100
150
200
T
C
[°C]
P
tot
=f(T
C
)
I
D
=f(T
C
);V
GS
≥10V
T
C
[°C]
Diagram3:Safeoperatingarea
10
3
Diagram4:Max.transientthermalimpedance
10
1
1 µs
10
2
10 µs
10
0
10
1
100 µs
0.5
Z
thJC
[K/W]
I
D
[A]
0.2
0.1
0.05
10
-1
1 ms
10
0
10 ms
10
-1
DC
0.02
0.01
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
I
D
=f(V
DS
);T
C
=25°C;D=0;parameter:t
p
Z
thJC
=f(t
p
);parameter:D=t
p
/T
t
p
[s]
Final Data Sheet
5
Rev.2.2,2016-01-22
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