EEWORLDEEWORLDEEWORLD

Part Number

Search

BUH150G

Description
Bipolar Transistors - BJT 15A 400V 150W NPN
CategoryDiscrete semiconductor    The transistor   
File Size271KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUH150G Online Shopping

Suppliers Part Number Price MOQ In stock  
BUH150G - - View Buy Now

BUH150G Overview

Bipolar Transistors - BJT 15A 400V 150W NPN

BUH150G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)23 MHz
BUH150G
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH150G has an application specific state−of−art die designed
for use in 150 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
Features
http://onsemi.com
Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
Robustness Due to the Technology Developed to Manufacture
this Device
ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
CM
I
B
I
BM
P
D
T
J
, T
stg
I
C
Value
400
700
700
10
15
25
6
12
150
1.2
−65
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
15 AMPERES
700 VOLTS, 150 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
0.85
62.5
260
Unit
_C/W
_C/W
_C
BUH150
A
Y
WW
G
BUH150G
AY WW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
BUH150G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 6
1
Publication Order Number:
BUH150/D
Timer A capture pulse help
Use the P2.1 port to capture pulses, but the calculated value is always wrong. Please help me figure out where the problem is. Thank you very much #include "msp430g2553.h" #include "LQ12864.h" #includ...
itachi91 Microcontroller MCU
【Low Power】About Xilinx Spartan-3E FPGA Development Data---Continuous Update
I happened to come across an event, so I shared all the information about Xilinx Spartan-3E FPGA low power and non-low power! ~ Season 1: petalinux-v0.40-final...
wanghongyang FPGA/CPLD
dsp2812 motor drive and control
[img]http://www.wingzstudio.net/DSP_board/images/all300225.jpg[/img] [size=10.5pt][font=宋体]Wingz Studio[/font][/size][size=10.5pt][font=宋体] is dedicated to AC and DC motor drive and control[/font][/si...
翼志工作室 Microcontroller MCU
MOS tube leakage current
MOS tube leakage currentIn micro wearable devices, the power consumption of the battery is very high, so in order to save power, there are actually many circuits. The most power-saving is undoubtedly ...
QWE4562009 Discrete Device
【Repost】Everything you want to know about rectifier diodes is here
[align=left][color=rgb(25, 25, 25)][font="]Characteristics of rectifier diodes[/font][/color][/align][align=left][color=rgb(25, 25, 25)][font="]Rectifier diodes use the unidirectional conductive chara...
皇华Ameya360 Power technology
What kind of work do you do in a foreign mobile phone development company like Sony Ericsson?
As the title says, I don't know what foreign companies doing in mobile phone development do, whether there is any technical content. Which company is better than Symantec? Thanks for your advice....
wtf Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 67  1466  2430  1461  541  2  30  49  11  54 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号