BFR380L3
Linear Low Noise Silicon Bipolar RF Transistor
•
High current capability and low noise figure for
wide dynamic range
•
Collector design supports supply voltage up to 5V
•
Ideal for low phase noise oscillators up to 3.5 GHz
•
Low noise figure 1.1 dB at 1.8 GHz
•
Pb-free (RoHS compliant) and halogen-free thin
small leadless package
•
Qualification report according to AEC-Q101 available
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR380L3
Parameter
Marking
FC
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
3=C
Value
Package
TSLP-3-1
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
96°C
6
15
15
2
80
14
380
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
140
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2013-08-29
BFR380L3
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 5 V,
V
BE
= 0
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 40 mA,
V
CE
= 3 V, pulse measured
h
FE
90
120
160
-
I
EBO
-
10
500
I
CBO
I
CES
-
-
-
1
-
-
30
1000
30
nA
V
(BR)CEO
6
9
-
V
Symbol
min.
Values
typ.
max.
Unit
2
2013-08-29
BFR380L3
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 40 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 8 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
f
= 3 GHz
Transducer gain
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 40 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB compression point at output
I
C
= 40 mA,
V
CE
= 3V,
f
= 1.8 GHz
Z
S
=
Z
L
= 50
Ω
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
1
G
1/2
ma
= |S
21e
/
S
12e
| (k-(k²-1) )
2
IP3 value depends on termination
Unit
max.
-
0.8
GHz
pF
typ.
14
0.45
f
T
C
cb
11
-
C
ce
-
0.18
-
C
eb
-
1
-
NF
min
0.5
1.1
2.1
dB
G
ma
11.5
7.5
|S
21e
|
2
9.5
5.5
IP3
-
11.5
7.5
29.5
13.5
9.5
-
dBm
14
10
16.5
12.5
dB
P
-1dB
-
-
16
19.5
-
-
of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-08-29
BFR380L3
Total power dissipation
P
tot
=
ƒ
(T
S
)
440
mW
360
320
P
tot
280
240
200
160
120
80
40
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2013-08-29
Package TSLP-3-1
BFR380L3
5
2013-08-29
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