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BUK9K35-60E115

Description
MOSFET Dual N-channel 60 V 35 mo FET
Categorysemiconductor    Discrete semiconductor   
File Size731KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9K35-60E115 Overview

MOSFET Dual N-channel 60 V 35 mo FET

BUK9K35-60E115 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56D-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current22 A
Rds On - Drain-Source Resistance30.5 mOhms
Vgs th - Gate-Source Threshold Voltage1.7 V
Vgs - Gate-Source Voltage15 V
Qg - Gate Charge14.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationDual
Pd - Power Dissipation38 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type2 N-Channel
Fall Time10 ns
NumOfPackaging3
Rise Time3.7 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time3.9 ns
Typical Turn-On Delay Time20.5 ns
BUK9K35-60E
12 November 2014
Dual N-channel 60 V, 35 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12
Min
-
-
-
Typ
-
-
-
Max
60
22
38
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
gate-drain charge
-
30.5
35
Dynamic characteristics FET1 and FET2
Q
GD
I
D
= 5 A; V
DS
= 48 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 14; Fig. 15
-
3
-
nC
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