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BCP6925H6327XTSA1

Description
Bipolar Transistors - BJT AF TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size514KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Bipolar Transistors - BJT AF TRANSISTORS

BCP6925H6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G4
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BCP69-25
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
4
2
1
3
Type
BCP69-25
Marking
...-25*
1=B
2=C
Pin Configuration
3=E
4=C
-
-
Package
SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
114 °C
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Value
20
25
25
5
1
2
100
200
3
W
mA
A
Unit
V
Thermal Resistance
Parameter
Symbol
R
thJS
1
Value
12
Unit
Junction - soldering point
1)
K/W
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