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BAP64-05W-TP

Description
PIN Diodes 200mW 100mA, 1.1V
Categorysemiconductor    Discrete semiconductor   
File Size469KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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PIN Diodes 200mW 100mA, 1.1V

BAP64-05W-TP Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMCC
Product CategoryPIN Diodes
RoHSDetails
Vr - Reverse Voltage175 V
Maximum Diode Capacitance0.52 pF
If - Forward Current100 mA
Vf - Forward Voltage1.1 V
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Minimum Operating Frequency-
Maximum Operating Frequency3 GHz
Mounting StyleSMD/SMT
Package / CaseSOT-323
PackagingReel
Termination StyleSMD/SMT
NumOfPackaging1
Pd - Power Dissipation200 mW
Factory Pack Quantity3000
Unit Weight0.002116 oz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAP64-05W
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Low diode capacitance
Low diode forward resistance
MARKING: 5W
General
Purpose Pin Diodes
200mW
SOT-323
A
D
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Continuous Reverse Voltage
Forward Current
Power Dissipation(T
A
=90
o
C)
Junction and Storage temperature
Symbol
V
R
I
F
P
D
T
j,
P
stg
Limits
175
100
200
-65~+150
Unit
V
mA
mW
o
B
C
F
E
Thermal Resistance Junction to
Ambient
R
thJA
625
C/W
G
H
J
K
DIMENSIONS
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Reverse Voltage
Leakage
Current
Forward voltage
Symbol Min. TYP
I
R
Max. Unit
10
uA
1.0
1.1
V
pF
pF
0.35
40
pF
Conditions
V
R
=175V
V
R
=20V
I
F
=50mA
V
R
=0V,f=1MHz
V
R
=1V,f=1MHz
V
R
=20V,f=1MHz
I
F
=0.5mA, f=100MHz
DIM
A
B
C
D
E
F
G
H
J
K
V
F
C
d1
C
d2
C
d3
r
D
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
NOTE
Diode capacitance
0.52
0.37
0.23
20
Suggested Solder
Pad Layout
0.70
0.90
Diode forward
resistance
1.90
r
D
r
D
10
2
20
3.8
I
F
=1mA , f=100MHz
I
F
=10mA , f=100MHz
r
D
Charge carrier
life time
0.7
1.35
I
F
=100mA , f=100MHz
0.65
when switched from
0.65
τ
L
L
S
1.55
1.4
μS
nH
I
F
=10 mAto I
R
= 6 mA; R
L
=
100Ω;measured
at I
R
=
3mA
I
F
=100mA, f=100MHz
Series inductance
Revision:
A
www.mccsemi.com
1
of
3
2011/01/01

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